Realization of polytype heterostructures via delicate structural transitions from a doped-Mott insulator
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| Main Authors: | , , , , , , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866911298013364224 |
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| author | Geng, Yanyan Wang, Manyu Meng, Shumin Mi, Shuo Li, Chang Hu, Huiji Guo, Jianfeng Xu, Rui Pang, Fei Ji, Wei Zhou, Weichang Cheng, Zhihai |
| author_facet | Geng, Yanyan Wang, Manyu Meng, Shumin Mi, Shuo Li, Chang Hu, Huiji Guo, Jianfeng Xu, Rui Pang, Fei Ji, Wei Zhou, Weichang Cheng, Zhihai |
| contents | Transition metal dichalcogenides (TMDs) host multiple competing structural and electronic phases, making them an ideal platform for constructing polytype heterostructures with emergent quantum properties. However, controlling phase transitions to form diverse heterostructures inside a single crystal remains challenging. Here, we realize vertical/lateral polytype heterostructures in a hole-doped Mott insulator via thermal-annealing-induced structural transitions. Raman spectroscopy, atomic force microscopy (AFM) and scanning Kelvin probe force microscopy (SKPM) confirm the coexistence of T-H polytype heterostructures. Atomic-scale scanning tunneling microscopy/spectroscopy (STM/STS) measurements reveal the transparent effect in 1H/1T vertical heterostructures, where the charge density wave (CDW) of the underlying 1T-layer superposes on the top 1H-layer under positive bias. By systematically comparing 1T/1H and 1T/1T interfaces, we demonstrate that the metallic 1H-layer imposes a Coulomb screening effect on the 1T-layer, suppressing the formation of CDW domain walls and forming more ordered electronic states. These results clarify the interfacial coupling between distinct quantum many-body phases and establish a controllable pathway for constructing two-dimensional polytype heterostructures with tunable electronic properties. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_02778 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Realization of polytype heterostructures via delicate structural transitions from a doped-Mott insulator Geng, Yanyan Wang, Manyu Meng, Shumin Mi, Shuo Li, Chang Hu, Huiji Guo, Jianfeng Xu, Rui Pang, Fei Ji, Wei Zhou, Weichang Cheng, Zhihai Materials Science Transition metal dichalcogenides (TMDs) host multiple competing structural and electronic phases, making them an ideal platform for constructing polytype heterostructures with emergent quantum properties. However, controlling phase transitions to form diverse heterostructures inside a single crystal remains challenging. Here, we realize vertical/lateral polytype heterostructures in a hole-doped Mott insulator via thermal-annealing-induced structural transitions. Raman spectroscopy, atomic force microscopy (AFM) and scanning Kelvin probe force microscopy (SKPM) confirm the coexistence of T-H polytype heterostructures. Atomic-scale scanning tunneling microscopy/spectroscopy (STM/STS) measurements reveal the transparent effect in 1H/1T vertical heterostructures, where the charge density wave (CDW) of the underlying 1T-layer superposes on the top 1H-layer under positive bias. By systematically comparing 1T/1H and 1T/1T interfaces, we demonstrate that the metallic 1H-layer imposes a Coulomb screening effect on the 1T-layer, suppressing the formation of CDW domain walls and forming more ordered electronic states. These results clarify the interfacial coupling between distinct quantum many-body phases and establish a controllable pathway for constructing two-dimensional polytype heterostructures with tunable electronic properties. |
| title | Realization of polytype heterostructures via delicate structural transitions from a doped-Mott insulator |
| topic | Materials Science |
| url | https://arxiv.org/abs/2512.02778 |