Electrically driven plasmon-polaritonic bistability in Dirac electron tunneling transistors

Fuente: arXiv
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Hauptverfasser: Zhang, Shuai, Xu, Yang, Zhang, Junhe, Sun, Dihao, Dong, Yinan, Fu, Matthew, Taniguchi, Takashi, Watanabe, Kenji, Dean, Cory R., Allen, Monica, Allen, Jeffery, de Abajo, F. Javier Garcia, Moilanen, Antti J., Novotny, Lukas, Basov, D. N.
Format: Preprint
Veröffentlicht: 2025
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author Zhang, Shuai
Xu, Yang
Zhang, Junhe
Sun, Dihao
Dong, Yinan
Fu, Matthew
Taniguchi, Takashi
Watanabe, Kenji
Dean, Cory R.
Allen, Monica
Allen, Jeffery
de Abajo, F. Javier Garcia
Moilanen, Antti J.
Novotny, Lukas
Basov, D. N.
author_facet Zhang, Shuai
Xu, Yang
Zhang, Junhe
Sun, Dihao
Dong, Yinan
Fu, Matthew
Taniguchi, Takashi
Watanabe, Kenji
Dean, Cory R.
Allen, Monica
Allen, Jeffery
de Abajo, F. Javier Garcia
Moilanen, Antti J.
Novotny, Lukas
Basov, D. N.
contents Bistability-two distinct stable states under identical parameter-is not only a fundamental physical concept but also of importance in practical applications. While plasmon-polaritonic bistability representing history-dependent stable states within plasmonic systems has been theoretically predicted, it has yet to be demonstrated experimentally due to challenges in realizing suitable nonlinearity at feasible electric-field strengths. Here, we report the experimental observation of electrically driven plasmon-polaritonic bistability in graphene/hexagonal-boron-nitride/graphene tunneling transistors, achieved through momentum-conserving resonant tunneling of Dirac electrons. Using a small twist angle between graphene layers, we engineered devices exhibiting both electronic and plasmon-polaritonic bistability. This bistable plasmonic behavior can be precisely tuned through load resistance and electrostatic gating. Our findings open new pathways for exploring nonlinear optical and electronic phenomena in van der Waals heterostructures and mark a significant advance in nanoplasmonics, with potential applications in optical memory, sensing, and optoelectronic switching.
format Preprint
id arxiv_https___arxiv_org_abs_2512_02909
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Electrically driven plasmon-polaritonic bistability in Dirac electron tunneling transistors
Zhang, Shuai
Xu, Yang
Zhang, Junhe
Sun, Dihao
Dong, Yinan
Fu, Matthew
Taniguchi, Takashi
Watanabe, Kenji
Dean, Cory R.
Allen, Monica
Allen, Jeffery
de Abajo, F. Javier Garcia
Moilanen, Antti J.
Novotny, Lukas
Basov, D. N.
Mesoscale and Nanoscale Physics
Materials Science
Adaptation and Self-Organizing Systems
Optics
Bistability-two distinct stable states under identical parameter-is not only a fundamental physical concept but also of importance in practical applications. While plasmon-polaritonic bistability representing history-dependent stable states within plasmonic systems has been theoretically predicted, it has yet to be demonstrated experimentally due to challenges in realizing suitable nonlinearity at feasible electric-field strengths. Here, we report the experimental observation of electrically driven plasmon-polaritonic bistability in graphene/hexagonal-boron-nitride/graphene tunneling transistors, achieved through momentum-conserving resonant tunneling of Dirac electrons. Using a small twist angle between graphene layers, we engineered devices exhibiting both electronic and plasmon-polaritonic bistability. This bistable plasmonic behavior can be precisely tuned through load resistance and electrostatic gating. Our findings open new pathways for exploring nonlinear optical and electronic phenomena in van der Waals heterostructures and mark a significant advance in nanoplasmonics, with potential applications in optical memory, sensing, and optoelectronic switching.
title Electrically driven plasmon-polaritonic bistability in Dirac electron tunneling transistors
topic Mesoscale and Nanoscale Physics
Materials Science
Adaptation and Self-Organizing Systems
Optics
url https://arxiv.org/abs/2512.02909