Microscopic evidence of dominant excitonic instability in Ta2NiSe5
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arXiv
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| Format: | Preprint |
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2025
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| _version_ | 1866917119695781888 |
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| author | Bae, Seokjin Raghavan, Arjun Feldman, Irena Kanigel, Amit Madhavan, Vidya |
| author_facet | Bae, Seokjin Raghavan, Arjun Feldman, Irena Kanigel, Amit Madhavan, Vidya |
| contents | An excitonic insulator (EI) is a charge-neutral bosonic condensate of spontaneously formed electron-hole pairs. Exotic quantum phenomena such as dissipationless charge neutral transport and huge potential for optoelectronic applications have led to an extensive search for intrinsic bulk materials that are EIs at ambient pressure without sophisticated device fabrication. The narrow gap semimetal Ta2NiSe5 has been proposed as a rare example of an intrinsic EI, but its ground state has remained controversial since the EI phase transition is accompanied by a structural distortion. Here, we use scanning tunneling microscopy and spectroscopy to present microscopic evidence that supports an excitonic origin of the insulating phase in Ta2NiSe5. First, we find that the insulating gap persists at structural domain boundaries where the bulk structural distortion is absent suggesting that the structural distortion is not the primary origin of insulating ground state. Second, the insulating gap is suppressed at localized charge puddles which indicates that charge correlations are important in producing the insulating gap. Finally, the decay length of the in-gap states at the puddles shows similar value to the estimated size of the exciton wavefunction from previous photoemission studies. Taken together, these findings suggest that Ta2NiSe5 is an EI and may be a versatile platform to study the physics of bosonic condensates in solid-state system at ambient conditions. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2512_03011 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Microscopic evidence of dominant excitonic instability in Ta2NiSe5 Bae, Seokjin Raghavan, Arjun Feldman, Irena Kanigel, Amit Madhavan, Vidya Strongly Correlated Electrons An excitonic insulator (EI) is a charge-neutral bosonic condensate of spontaneously formed electron-hole pairs. Exotic quantum phenomena such as dissipationless charge neutral transport and huge potential for optoelectronic applications have led to an extensive search for intrinsic bulk materials that are EIs at ambient pressure without sophisticated device fabrication. The narrow gap semimetal Ta2NiSe5 has been proposed as a rare example of an intrinsic EI, but its ground state has remained controversial since the EI phase transition is accompanied by a structural distortion. Here, we use scanning tunneling microscopy and spectroscopy to present microscopic evidence that supports an excitonic origin of the insulating phase in Ta2NiSe5. First, we find that the insulating gap persists at structural domain boundaries where the bulk structural distortion is absent suggesting that the structural distortion is not the primary origin of insulating ground state. Second, the insulating gap is suppressed at localized charge puddles which indicates that charge correlations are important in producing the insulating gap. Finally, the decay length of the in-gap states at the puddles shows similar value to the estimated size of the exciton wavefunction from previous photoemission studies. Taken together, these findings suggest that Ta2NiSe5 is an EI and may be a versatile platform to study the physics of bosonic condensates in solid-state system at ambient conditions. |
| title | Microscopic evidence of dominant excitonic instability in Ta2NiSe5 |
| topic | Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2512.03011 |