A Space-Charge-Limited van der Waals Spin Transistor
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arXiv
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| Main Authors: | , , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| _version_ | 1866914178396061696 |
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| author | Graham, Thomas K. M. Wang, Yu-Xuan Nair, Niranjana Renjith Mosina, Kseniia Watanabe, Kenji Taniguchi, Takashi Sofer, Zdenek Zhou, Brian B. |
| author_facet | Graham, Thomas K. M. Wang, Yu-Xuan Nair, Niranjana Renjith Mosina, Kseniia Watanabe, Kenji Taniguchi, Takashi Sofer, Zdenek Zhou, Brian B. |
| contents | Integrating semiconducting and magnetic materials could combine transistor-like operation with nonvolatility and enable architectures such as logic-in-memory. Here, we employ correlated electrical transport and scanning nitrogen-vacancy (NV) center magnetic imaging to elucidate a spin transistor concept that amalgamates both vertical and lateral transport in a 2D antiferromagnetic semiconductor, distinct from purely vertical tunneling devices. Our device, based on a monolayer-bilayer junction in CrSBr, displays giant, gate-tunable magnetoresistance driven by the dual action of electrostatic doping on space-charge-limited lateral conduction and interlayer exchange coupling. Moreover, we visualize a field-trainable, layer-sharing effect that selects between coherent or domain-wall reversal at the spin-flip transition, enabling multilevel, memristive conductance states. These findings open opportunities for 2D magnetic semiconductors to address limitations in contemporary computing. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_03306 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | A Space-Charge-Limited van der Waals Spin Transistor Graham, Thomas K. M. Wang, Yu-Xuan Nair, Niranjana Renjith Mosina, Kseniia Watanabe, Kenji Taniguchi, Takashi Sofer, Zdenek Zhou, Brian B. Mesoscale and Nanoscale Physics Materials Science Integrating semiconducting and magnetic materials could combine transistor-like operation with nonvolatility and enable architectures such as logic-in-memory. Here, we employ correlated electrical transport and scanning nitrogen-vacancy (NV) center magnetic imaging to elucidate a spin transistor concept that amalgamates both vertical and lateral transport in a 2D antiferromagnetic semiconductor, distinct from purely vertical tunneling devices. Our device, based on a monolayer-bilayer junction in CrSBr, displays giant, gate-tunable magnetoresistance driven by the dual action of electrostatic doping on space-charge-limited lateral conduction and interlayer exchange coupling. Moreover, we visualize a field-trainable, layer-sharing effect that selects between coherent or domain-wall reversal at the spin-flip transition, enabling multilevel, memristive conductance states. These findings open opportunities for 2D magnetic semiconductors to address limitations in contemporary computing. |
| title | A Space-Charge-Limited van der Waals Spin Transistor |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2512.03306 |