Numerical simulation of coherent spin-shuttling in a QuBus with charged defects
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| Main Authors: | , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866911299970007040 |
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| author | Ciroth, Nils Sala, Arnau Xue, Ran Ermoneit, Lasse Koprucki, Thomas Kantner, Markus Schreiber, Lars R. |
| author_facet | Ciroth, Nils Sala, Arnau Xue, Ran Ermoneit, Lasse Koprucki, Thomas Kantner, Markus Schreiber, Lars R. |
| contents | Recent advances in coherent conveyor-mode spin qubit shuttling are paving the way for large-scale quantum computing platforms with qubit connectivity achieved by spin qubit shuttles. We developed a simulation tool to investigate numerically the impact of device imperfections on the spin-coherence of conveyor-mode shuttling in Si/SiGe. We simulate the quantum evolution of a mobile electron spin-qubit under the influence of sparse and singly charged point defects placed in the Si/SiGe heterostructure in close proximity to the shuttle lane. We consider different locations of a single charge defect with respect to the center of the shuttle lane, multiple orbital states of the electron in the shuttle with $g$-factor differences between the orbital levels, and orbital relaxation induced by electron-phonon interaction. With this simulation framework, we identify the critical defect density of charged point defects in the heterostructure for conveyor-mode spin qubit shuttle devices and quantify the impact of a single defect on the coherence of a qubit. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_03588 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Numerical simulation of coherent spin-shuttling in a QuBus with charged defects Ciroth, Nils Sala, Arnau Xue, Ran Ermoneit, Lasse Koprucki, Thomas Kantner, Markus Schreiber, Lars R. Mesoscale and Nanoscale Physics Quantum Physics Recent advances in coherent conveyor-mode spin qubit shuttling are paving the way for large-scale quantum computing platforms with qubit connectivity achieved by spin qubit shuttles. We developed a simulation tool to investigate numerically the impact of device imperfections on the spin-coherence of conveyor-mode shuttling in Si/SiGe. We simulate the quantum evolution of a mobile electron spin-qubit under the influence of sparse and singly charged point defects placed in the Si/SiGe heterostructure in close proximity to the shuttle lane. We consider different locations of a single charge defect with respect to the center of the shuttle lane, multiple orbital states of the electron in the shuttle with $g$-factor differences between the orbital levels, and orbital relaxation induced by electron-phonon interaction. With this simulation framework, we identify the critical defect density of charged point defects in the heterostructure for conveyor-mode spin qubit shuttle devices and quantify the impact of a single defect on the coherence of a qubit. |
| title | Numerical simulation of coherent spin-shuttling in a QuBus with charged defects |
| topic | Mesoscale and Nanoscale Physics Quantum Physics |
| url | https://arxiv.org/abs/2512.03588 |