Non-radiative energy transfer between boron vacancies in hexagonal boron nitride and other 2D materials
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| Main Authors: | , , , , , , , , , , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866917122424176640 |
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| author | Jules, Fraunié Glazov, Mikhail M. Roux, Sébastien Torres-Dias, Abraao Cefas Crunteanu-Stanescu, Cora Fournier, Tom Dehaghani, Maryam S. Clua-Provost, Tristan Lagarde, Delphine Lombez, Laurent Marie, Xavier Lassagne, Benjamin Poirier, Thomas Edgar, James H. Jacques, Vincent Robert, Cedric |
| author_facet | Jules, Fraunié Glazov, Mikhail M. Roux, Sébastien Torres-Dias, Abraao Cefas Crunteanu-Stanescu, Cora Fournier, Tom Dehaghani, Maryam S. Clua-Provost, Tristan Lagarde, Delphine Lombez, Laurent Marie, Xavier Lassagne, Benjamin Poirier, Thomas Edgar, James H. Jacques, Vincent Robert, Cedric |
| contents | Boron vacancies ($V_B^-$) in hexagonal boron nitride (hBN) have emerged as a promising platform for two-dimensional quantum sensors capable of operating at atomic-scale proximity. However, the mechanisms responsible for photoluminescence quenching in thin hBN sensing layers when placed in contact with absorptive materials remain largely unexplored. In this Letter, we investigate non-radiative Förster resonance energy transfer (FRET) between $V_B^-$ centers and either monolayer graphene or 2D semiconductors. Strikingly, we find that the FRET rate is negligible for hBN sensing layers thicker than 3 nm, highlighting the potential of $V_B^-$ centers for integration into ultra-thin quantum sensors within van der Waals heterostructures. Furthermore, we experimentally extract the intrinsic radiative decay rate of $V_B^-$ defects. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_03970 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Non-radiative energy transfer between boron vacancies in hexagonal boron nitride and other 2D materials Jules, Fraunié Glazov, Mikhail M. Roux, Sébastien Torres-Dias, Abraao Cefas Crunteanu-Stanescu, Cora Fournier, Tom Dehaghani, Maryam S. Clua-Provost, Tristan Lagarde, Delphine Lombez, Laurent Marie, Xavier Lassagne, Benjamin Poirier, Thomas Edgar, James H. Jacques, Vincent Robert, Cedric Materials Science Mesoscale and Nanoscale Physics Quantum Physics Boron vacancies ($V_B^-$) in hexagonal boron nitride (hBN) have emerged as a promising platform for two-dimensional quantum sensors capable of operating at atomic-scale proximity. However, the mechanisms responsible for photoluminescence quenching in thin hBN sensing layers when placed in contact with absorptive materials remain largely unexplored. In this Letter, we investigate non-radiative Förster resonance energy transfer (FRET) between $V_B^-$ centers and either monolayer graphene or 2D semiconductors. Strikingly, we find that the FRET rate is negligible for hBN sensing layers thicker than 3 nm, highlighting the potential of $V_B^-$ centers for integration into ultra-thin quantum sensors within van der Waals heterostructures. Furthermore, we experimentally extract the intrinsic radiative decay rate of $V_B^-$ defects. |
| title | Non-radiative energy transfer between boron vacancies in hexagonal boron nitride and other 2D materials |
| topic | Materials Science Mesoscale and Nanoscale Physics Quantum Physics |
| url | https://arxiv.org/abs/2512.03970 |