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Bibliographic Details
Main Authors:	Söll, Aljoscha, Jadrisko, Valentino, Dey, Sourav, Benchtaber, Nassima, Sarkar, Kalyan, Radatovic, Borna, Luxa, Jan, Lipilin, Fedor, Mosina, Kseniia, Kundrat, Vojtech, Zalesak, Jakub, Vejpravova, Jana, Zacek, Martin, Gadermaier, Christoph, Baldoví, José J., Sofer, Zdeněk
Format:	Preprint
Published:	2025
Subjects:	Materials Science
Online Access:	https://arxiv.org/abs/2512.04029
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Table of Contents:

Direction-dependent charge transport and optical responses are characteristic of van der Waals (vdW) materials with strong in-plane anisotropy. While transition-metal trichalcogenides (TMTCs) exemplify this behavior, heavier analogs remain largely unexplored. In this study we examine USe$_3$ as an anisotropic vdW material and a heavier analog of the well-studied TMTCs. We reveal strong in-plane anisotropy using polarization-resolved Raman spectroscopy, investigate strain-induced shifts of phonon modes, and quantify direction-dependent charge-carrier mobility through transport measurements on field-effect devices. First-principles calculations based on density-functional theory corroborate our findings, providing a theoretical basis for our experimental observations. Casting USe$_3$ as an actinide analog of a TMTC establishes a platform for exploring low-dimensional semiconductors that combine strong in-plane anisotropy with f-electron physics.

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