Demonstration of KV-Class \b{eta}-Ga2O3 Trench Junction Barrier Schottky Diodes with SpaceModulated Junction Termination Extension
Fuente:
arXiv
Guardado en:
| Autores principales: | , , , , , , |
|---|---|
| Formato: | Preprint |
| Publicado: |
2025
|
| Materias: | |
| Acceso en línea: | |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| _version_ | 1866915651863445504 |
|---|---|
| author | Gilankar, Advait Gervassi-Saga, Julian McCartney, Martha R. Das, Nabasindhu McComas, David Malcolm Smith, David J. Kalarickal, Nidhin Kurian |
| author_facet | Gilankar, Advait Gervassi-Saga, Julian McCartney, Martha R. Das, Nabasindhu McComas, David Malcolm Smith, David J. Kalarickal, Nidhin Kurian |
| contents | In this work, we report on the design and fabrication of p-NiO/Ga2O3 trench junction barrier schottky diodes (JBSD) integrated with space-modulated junction termination extension (SM-JTE) and compare the performance with planar Ni/Ga2O3 schottky diodes (SBDs) and p-NiO/Ga2O3 heterojunction diodes (HJDs). The JBSDs achieved breakdown voltages exceeding 1.8 kV along with low leakage currents (<10-2 A/cm2), while displaying low turn on voltage (VON) of ~1V, which is similar to that of planar Ni/Ga2O3 SBDs. The fabricated devices showed excellent forward characteristics with low differential on-resistance (Ron,sp) ranging from 4-10.5 mΩ-cm2, for fin width between 0.6- 1.25 microns. Best performing device with fin width of 0.85μm showed a unipolar figure of merit (FOM) of ~0.7GW/cm2. This work showcases the benefits of trench JBS design along with SM-JTE edge-termination for efficient high-performance kilovolt-class \b{eta}- Ga2O3 diodes. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_04033 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Demonstration of KV-Class \b{eta}-Ga2O3 Trench Junction Barrier Schottky Diodes with SpaceModulated Junction Termination Extension Gilankar, Advait Gervassi-Saga, Julian McCartney, Martha R. Das, Nabasindhu McComas, David Malcolm Smith, David J. Kalarickal, Nidhin Kurian Applied Physics In this work, we report on the design and fabrication of p-NiO/Ga2O3 trench junction barrier schottky diodes (JBSD) integrated with space-modulated junction termination extension (SM-JTE) and compare the performance with planar Ni/Ga2O3 schottky diodes (SBDs) and p-NiO/Ga2O3 heterojunction diodes (HJDs). The JBSDs achieved breakdown voltages exceeding 1.8 kV along with low leakage currents (<10-2 A/cm2), while displaying low turn on voltage (VON) of ~1V, which is similar to that of planar Ni/Ga2O3 SBDs. The fabricated devices showed excellent forward characteristics with low differential on-resistance (Ron,sp) ranging from 4-10.5 mΩ-cm2, for fin width between 0.6- 1.25 microns. Best performing device with fin width of 0.85μm showed a unipolar figure of merit (FOM) of ~0.7GW/cm2. This work showcases the benefits of trench JBS design along with SM-JTE edge-termination for efficient high-performance kilovolt-class \b{eta}- Ga2O3 diodes. |
| title | Demonstration of KV-Class \b{eta}-Ga2O3 Trench Junction Barrier Schottky Diodes with SpaceModulated Junction Termination Extension |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2512.04033 |