Enhancing solar cell efficiency of AlxIn1-xN/Si heterojunctions using an a-Si buffer: A study of material, interface and device properties
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| Main Authors: | , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| _version_ | 1866917124145938432 |
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| author | Sun, M. Cornejo, R. G. de la Mata, M. Molina, S. I. Damilano, B. Valdueza-Felip, S. Naranjo, F. B. |
| author_facet | Sun, M. Cornejo, R. G. de la Mata, M. Molina, S. I. Damilano, B. Valdueza-Felip, S. Naranjo, F. B. |
| contents | This study explores the impact of an optimized amorphous silicon (a-Si) buffer layer on AlxIn1-xN-on-Si(100) heterojunction solar cells, with Al content varying from 0% (InN) to 55%. The buffer layer improves the structural quality of the AlInN layer, as evidenced by reduced full width at half maximum values in X-ray diffraction rocking curves around the AlInN (0002) peak. Atomic force microscopy reveals that the buffer layer does not alter surface roughness. The effectiveness of the a-Si buffer is demonstrated by an enhancement of the conversion efficiency under AM1.5G illumination from 3.3 % to 3.9 % for devices with 35 % Al. Looking at the effect of the Al content in devices with the a-Si buffer, the device with 22% Al shows the best photovoltaic performance, with a conversion efficiency of 4.1 % and a VOC of 0.42 V, JSC of 15.4 mA/cm2, and FF of 63.3%. However, performance declines for Al contents above 36% due to increased resistivity and reduced carrier concentration. These findings highlight the critical role of the novel a-Si buffer layer developed by RF-sputtering and the Al content in optimizing AlInN/Si heterojunction solar cell performance. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_04243 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Enhancing solar cell efficiency of AlxIn1-xN/Si heterojunctions using an a-Si buffer: A study of material, interface and device properties Sun, M. Cornejo, R. G. de la Mata, M. Molina, S. I. Damilano, B. Valdueza-Felip, S. Naranjo, F. B. Materials Science Applied Physics This study explores the impact of an optimized amorphous silicon (a-Si) buffer layer on AlxIn1-xN-on-Si(100) heterojunction solar cells, with Al content varying from 0% (InN) to 55%. The buffer layer improves the structural quality of the AlInN layer, as evidenced by reduced full width at half maximum values in X-ray diffraction rocking curves around the AlInN (0002) peak. Atomic force microscopy reveals that the buffer layer does not alter surface roughness. The effectiveness of the a-Si buffer is demonstrated by an enhancement of the conversion efficiency under AM1.5G illumination from 3.3 % to 3.9 % for devices with 35 % Al. Looking at the effect of the Al content in devices with the a-Si buffer, the device with 22% Al shows the best photovoltaic performance, with a conversion efficiency of 4.1 % and a VOC of 0.42 V, JSC of 15.4 mA/cm2, and FF of 63.3%. However, performance declines for Al contents above 36% due to increased resistivity and reduced carrier concentration. These findings highlight the critical role of the novel a-Si buffer layer developed by RF-sputtering and the Al content in optimizing AlInN/Si heterojunction solar cell performance. |
| title | Enhancing solar cell efficiency of AlxIn1-xN/Si heterojunctions using an a-Si buffer: A study of material, interface and device properties |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2512.04243 |