High Fidelity Qubit Control in a Natural Si-MOS Quantum Dot using a 300 mm Silicon on Insulator Wafer
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| Format: | Preprint |
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2025
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| _version_ | 1866915654285656064 |
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| author | Peetroons, Xander Luo, Xunyao Yang, Tsung-Yeh Mertig, Normann Beyne, Sofie Jussot, Julien Shimura, Yosuke Godfrin, Clement Raes, Bart Li, Ruoyu Loo, Roger Baudot, Sylvain Kubicek, Stefan Kaushik, Shuchi Wan, Danny Utsugi, Takeru Kuno, Takuma Lee, Noriyuki Yanagi, Itaru Mine, Toshiyuki Muraoka, Satoshi Saito, Shinichi Hisamoto, Digh Tsuchiya, Ryuta Mizuno, Hiroyuki De Greve, Kristiaan Smith, Charles Knowles, Helena Ramsay, Andrew |
| author_facet | Peetroons, Xander Luo, Xunyao Yang, Tsung-Yeh Mertig, Normann Beyne, Sofie Jussot, Julien Shimura, Yosuke Godfrin, Clement Raes, Bart Li, Ruoyu Loo, Roger Baudot, Sylvain Kubicek, Stefan Kaushik, Shuchi Wan, Danny Utsugi, Takeru Kuno, Takuma Lee, Noriyuki Yanagi, Itaru Mine, Toshiyuki Muraoka, Satoshi Saito, Shinichi Hisamoto, Digh Tsuchiya, Ryuta Mizuno, Hiroyuki De Greve, Kristiaan Smith, Charles Knowles, Helena Ramsay, Andrew |
| contents | We demonstrate high-fidelity single qubit control in a natural Si-MOS quantum dot fabricated in an industrial 300 mm wafer process on a silicon on insulator (SOI) wafer using electron spin resonance. A relatively high optimal Rabi frequency of 5 MHz is achieved, dynamically decoupling the electron spin from its 29-Si environment. Tracking the qubit frequency reduces the impact of low frequency noise in the qubit frequency and improves the $T^{Rabi}$ from 7 to 11 $μ$s at a Rabi frequency of 5 MHz, resulting in Q-factors exceeding 50. Randomized benchmarking returns an average single gate control fidelity of 99.5 $\pm$ 0.3%. As a result of pulse-area calibration, this fidelity is limited by the Rabi Q-factor. These results show that a fast Rabi frequency, low charge noise, and a feedback protocol enable high fidelity in these Si-MOS devices, despite the low-frequency magnetic noise. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_05052 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | High Fidelity Qubit Control in a Natural Si-MOS Quantum Dot using a 300 mm Silicon on Insulator Wafer Peetroons, Xander Luo, Xunyao Yang, Tsung-Yeh Mertig, Normann Beyne, Sofie Jussot, Julien Shimura, Yosuke Godfrin, Clement Raes, Bart Li, Ruoyu Loo, Roger Baudot, Sylvain Kubicek, Stefan Kaushik, Shuchi Wan, Danny Utsugi, Takeru Kuno, Takuma Lee, Noriyuki Yanagi, Itaru Mine, Toshiyuki Muraoka, Satoshi Saito, Shinichi Hisamoto, Digh Tsuchiya, Ryuta Mizuno, Hiroyuki De Greve, Kristiaan Smith, Charles Knowles, Helena Ramsay, Andrew Mesoscale and Nanoscale Physics Quantum Physics We demonstrate high-fidelity single qubit control in a natural Si-MOS quantum dot fabricated in an industrial 300 mm wafer process on a silicon on insulator (SOI) wafer using electron spin resonance. A relatively high optimal Rabi frequency of 5 MHz is achieved, dynamically decoupling the electron spin from its 29-Si environment. Tracking the qubit frequency reduces the impact of low frequency noise in the qubit frequency and improves the $T^{Rabi}$ from 7 to 11 $μ$s at a Rabi frequency of 5 MHz, resulting in Q-factors exceeding 50. Randomized benchmarking returns an average single gate control fidelity of 99.5 $\pm$ 0.3%. As a result of pulse-area calibration, this fidelity is limited by the Rabi Q-factor. These results show that a fast Rabi frequency, low charge noise, and a feedback protocol enable high fidelity in these Si-MOS devices, despite the low-frequency magnetic noise. |
| title | High Fidelity Qubit Control in a Natural Si-MOS Quantum Dot using a 300 mm Silicon on Insulator Wafer |
| topic | Mesoscale and Nanoscale Physics Quantum Physics |
| url | https://arxiv.org/abs/2512.05052 |