Size-effects on shift-current in layered CuInP$_2$S$_6$
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| Format: | Preprint |
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2025
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| _version_ | 1866909946499563520 |
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| author | Delodovici, Francesco Dkhil, Brahim Paillard, Charles |
| author_facet | Delodovici, Francesco Dkhil, Brahim Paillard, Charles |
| contents | Two-dimensional ferroelectrics have recently emerged as a promising avenue for next-generation optoelectronic and photovoltaic devices. Due to the intrinsic absence of inversion symmetry, 2D ferroelectrics exhibit bulk photovoltaic effect (BPVE), which relies on hot, non-thermalized photo-excited carriers to generate a photo-induced current with enhanced performances thanks to efficient charge separation mechanisms. The absence of a required p-n junction architecture makes these materials particularly attractive for nanoscale energy harvesting. Recent studies have reported enhanced BPVE in nanometer-thick CuInP$_2$S$_6$ ferroelectric embedded between two graphene wafers, driven by relatively strong polarization and reduced dimensionality. Short circuit photocurrent density values have been observed to reach up to mA/cm$^2$. In this paper, we demonstrate that the shift-current mechanism alone cannot fully account for these high conductivity values, suggesting that additional mechanisms may play a significant role. Furthermore, our work confirms the existence of a strong size effect, which drastically reduces the shift-conductivity response in the bulk limit, in agreement with experimental observations. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2512_05796 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Size-effects on shift-current in layered CuInP$_2$S$_6$ Delodovici, Francesco Dkhil, Brahim Paillard, Charles Materials Science Applied Physics Two-dimensional ferroelectrics have recently emerged as a promising avenue for next-generation optoelectronic and photovoltaic devices. Due to the intrinsic absence of inversion symmetry, 2D ferroelectrics exhibit bulk photovoltaic effect (BPVE), which relies on hot, non-thermalized photo-excited carriers to generate a photo-induced current with enhanced performances thanks to efficient charge separation mechanisms. The absence of a required p-n junction architecture makes these materials particularly attractive for nanoscale energy harvesting. Recent studies have reported enhanced BPVE in nanometer-thick CuInP$_2$S$_6$ ferroelectric embedded between two graphene wafers, driven by relatively strong polarization and reduced dimensionality. Short circuit photocurrent density values have been observed to reach up to mA/cm$^2$. In this paper, we demonstrate that the shift-current mechanism alone cannot fully account for these high conductivity values, suggesting that additional mechanisms may play a significant role. Furthermore, our work confirms the existence of a strong size effect, which drastically reduces the shift-conductivity response in the bulk limit, in agreement with experimental observations. |
| title | Size-effects on shift-current in layered CuInP$_2$S$_6$ |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2512.05796 |