Design of a High-Power and High-Efficiency GaN-HEMT VCO Based on an Inverse Class-F Amplifier

Fuente: arXiv
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Autori principali: Mi, Junlin, Fan, Ruinan, Yan, Liping, Feng, Yuhao, Liu, Changjun
Natura: Preprint
Pubblicazione: 2025
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author Mi, Junlin
Fan, Ruinan
Yan, Liping
Feng, Yuhao
Liu, Changjun
author_facet Mi, Junlin
Fan, Ruinan
Yan, Liping
Feng, Yuhao
Liu, Changjun
contents This letter proposes a high-power and high-efficiency GaN-HEMT voltage-controlled oscillator. The VCO consists of a coupled-line coupler, an inverse class-F amplifier, and a novel frequency-tunable stepped-impedance resonator. Using a harmonic control circuit and a parasitic parameter compensation circuit, the power amplifier operates in the inverse class-F state to achieve high efficiency. The feedback circuit uses a coupled-line coupler instead of the traditional coupling capacitor to control feedback power precisely. The measurement results show that the VCO with an oscillation frequency of 2.41-2.45 GHz achieves a maximum conversion efficiency of 74.5% at 2.44 GHz and an output power of 40.2 dBm. It is a candidate for the microwave source in a wireless power transmission system.
format Preprint
id arxiv_https___arxiv_org_abs_2512_05846
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Design of a High-Power and High-Efficiency GaN-HEMT VCO Based on an Inverse Class-F Amplifier
Mi, Junlin
Fan, Ruinan
Yan, Liping
Feng, Yuhao
Liu, Changjun
Applied Physics
This letter proposes a high-power and high-efficiency GaN-HEMT voltage-controlled oscillator. The VCO consists of a coupled-line coupler, an inverse class-F amplifier, and a novel frequency-tunable stepped-impedance resonator. Using a harmonic control circuit and a parasitic parameter compensation circuit, the power amplifier operates in the inverse class-F state to achieve high efficiency. The feedback circuit uses a coupled-line coupler instead of the traditional coupling capacitor to control feedback power precisely. The measurement results show that the VCO with an oscillation frequency of 2.41-2.45 GHz achieves a maximum conversion efficiency of 74.5% at 2.44 GHz and an output power of 40.2 dBm. It is a candidate for the microwave source in a wireless power transmission system.
title Design of a High-Power and High-Efficiency GaN-HEMT VCO Based on an Inverse Class-F Amplifier
topic Applied Physics
url https://arxiv.org/abs/2512.05846