Modeling and Optimization of Two-Terminal Spin-Orbit-Torque MRAM
Fuente:
arXiv
Enregistré dans:
| Auteurs principaux: | , , , , |
|---|---|
| Format: | Preprint |
| Publié: |
2025
|
| Sujets: | |
| Accès en ligne: | |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
| _version_ | 1866914183011893248 |
|---|---|
| author | Shazon, Md Nahid Haque Kumar, Piyush Liu, Luqiao Ralph, Daniel C. Naeemi, Azad |
| author_facet | Shazon, Md Nahid Haque Kumar, Piyush Liu, Luqiao Ralph, Daniel C. Naeemi, Azad |
| contents | This paper presents physical modeling and benchmarking for two-terminal spin-orbit torque magnetic random-access memory (2T-SOT-MRAM). The results indicate that the common SOT materials that provide only in-plane torque can provide little to no improvement over spin-transfer-torque (STT) MRAM in terms of write energy. However, emerging SOT materials that provide out-of-plane torques with efficiencies as small as 0.1 can result in significant improvements in the write energy for such 2-terminal devices, especially when the magnet lateral dimensions are scaled down to 30 or 20 nm. Additionally, a novel 2T-SOT MRAM device is proposed that can increase the path electrons pass through the SOT layer; hence, increasing the generated spin current and the energy efficiency of the device. Our benchmarking results indicate that an out-of-plane SOT efficiency of 0.051 for 20nm wide devices can result in write energies approaching SRAM at the 7nm technology node. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_06215 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Modeling and Optimization of Two-Terminal Spin-Orbit-Torque MRAM Shazon, Md Nahid Haque Kumar, Piyush Liu, Luqiao Ralph, Daniel C. Naeemi, Azad Mesoscale and Nanoscale Physics This paper presents physical modeling and benchmarking for two-terminal spin-orbit torque magnetic random-access memory (2T-SOT-MRAM). The results indicate that the common SOT materials that provide only in-plane torque can provide little to no improvement over spin-transfer-torque (STT) MRAM in terms of write energy. However, emerging SOT materials that provide out-of-plane torques with efficiencies as small as 0.1 can result in significant improvements in the write energy for such 2-terminal devices, especially when the magnet lateral dimensions are scaled down to 30 or 20 nm. Additionally, a novel 2T-SOT MRAM device is proposed that can increase the path electrons pass through the SOT layer; hence, increasing the generated spin current and the energy efficiency of the device. Our benchmarking results indicate that an out-of-plane SOT efficiency of 0.051 for 20nm wide devices can result in write energies approaching SRAM at the 7nm technology node. |
| title | Modeling and Optimization of Two-Terminal Spin-Orbit-Torque MRAM |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2512.06215 |