Physics-based Full-band GaN High-Electron-Mobility Transistor Simulation Suggests Upper Bound of LO Phonon Lifetime

Fuente: arXiv

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Bibliographic Details
Main Authors:	Dastider, Ankan Ghosh, Grupen, Matt, Tunga, Ashwin, Rakheja, Shaloo
Format:	Preprint
Published:	2025
Subjects:	Applied Physics
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2512.06226