Scale-robust Low Resistance Transport in Atomic Layer Deposited Topological Semimetal Wafers on Amorphous Substrate
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arXiv
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| Autores principales: | , , , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2025
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| _version_ | 1866911306045456384 |
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| author | Lim, Dong-Hyun Song, Young-Min Kim, Yeji Choi, Ae Rim Kim, Hyun-Mi Kim, Hyeongkeun Kwon, Sujin Shong, Bonggeun Shih, Justin Khan, Asir Intisar Oh, Il-Kwon |
| author_facet | Lim, Dong-Hyun Song, Young-Min Kim, Yeji Choi, Ae Rim Kim, Hyun-Mi Kim, Hyeongkeun Kwon, Sujin Shong, Bonggeun Shih, Justin Khan, Asir Intisar Oh, Il-Kwon |
| contents | As data-centric computing advances, energy-efficient interconnects are increasingly critical for AI-driven systems. Traditional metal conductors face severe limitations at nanoscale due to increased resistivity from surface scattering. In response, this study demonstrates the first wafer-scale realization of an amorphous topological semimetal, tantalum phosphide (TaP), grown directly on amorphous SiO2 substrates (without any seed layers) using low-temperature atomic layer deposition (ALD). The resulting TaP films exhibit unconventional resistivity scaling: decreasing resistivity with decreasing thickness, reaching 227 micro-ohm cm at ~2.3 nm film thickness. This behavior, observed without crystalline order or seed layers, indicates dominant surface conduction and establishes ALD-TaP as a promising candidate for back-end-of-line integration. The films also show excellent conformality, stoichiometry control, and thermal stability up to 600 degree C. A two-channel conduction model confirms surface-dominated transport in ultrathin regimes, further supported by enhanced conductivity in multi-stacked configurations. These findings highlight the potential of amorphous topological semimetals for future high-density, low-power electronic interconnects and expand the applicability of ALD for integrating novel quantum materials at scale. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_06307 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Scale-robust Low Resistance Transport in Atomic Layer Deposited Topological Semimetal Wafers on Amorphous Substrate Lim, Dong-Hyun Song, Young-Min Kim, Yeji Choi, Ae Rim Kim, Hyun-Mi Kim, Hyeongkeun Kwon, Sujin Shong, Bonggeun Shih, Justin Khan, Asir Intisar Oh, Il-Kwon Materials Science As data-centric computing advances, energy-efficient interconnects are increasingly critical for AI-driven systems. Traditional metal conductors face severe limitations at nanoscale due to increased resistivity from surface scattering. In response, this study demonstrates the first wafer-scale realization of an amorphous topological semimetal, tantalum phosphide (TaP), grown directly on amorphous SiO2 substrates (without any seed layers) using low-temperature atomic layer deposition (ALD). The resulting TaP films exhibit unconventional resistivity scaling: decreasing resistivity with decreasing thickness, reaching 227 micro-ohm cm at ~2.3 nm film thickness. This behavior, observed without crystalline order or seed layers, indicates dominant surface conduction and establishes ALD-TaP as a promising candidate for back-end-of-line integration. The films also show excellent conformality, stoichiometry control, and thermal stability up to 600 degree C. A two-channel conduction model confirms surface-dominated transport in ultrathin regimes, further supported by enhanced conductivity in multi-stacked configurations. These findings highlight the potential of amorphous topological semimetals for future high-density, low-power electronic interconnects and expand the applicability of ALD for integrating novel quantum materials at scale. |
| title | Scale-robust Low Resistance Transport in Atomic Layer Deposited Topological Semimetal Wafers on Amorphous Substrate |
| topic | Materials Science |
| url | https://arxiv.org/abs/2512.06307 |