Rewritable Complementary Nanoelectronics Enabled by Electron-Beam Programmable Ambipolar Doping
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arXiv
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| Autores principales: | , , , , , , , , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2025
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| Materias: | |
| Acceso en línea: | |
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| _version_ | 1866914184859484160 |
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| author | Lan, Qing Song, Wenqing Zhu, Siyin Zhou, Yi Wang, Lu Wei, Junjie Liu, Jiaqi Guo, Zejing Taniguchi, Takashi Watanabe, Kenji Huang, Hai Wang, Jingli Zhou, Xiaodong Zettl, Alex Shen, Jian Shi, Wu |
| author_facet | Lan, Qing Song, Wenqing Zhu, Siyin Zhou, Yi Wang, Lu Wei, Junjie Liu, Jiaqi Guo, Zejing Taniguchi, Takashi Watanabe, Kenji Huang, Hai Wang, Jingli Zhou, Xiaodong Zettl, Alex Shen, Jian Shi, Wu |
| contents | The ability to reversibly and site-selectively tune ambipolar doping in a single semiconductor is crucial for reconfigurable electronics beyond silicon, but remains highly challenging. Here, we present a rewritable architecture based on electron-beam programmable field-effect transistors (FETs). Using WSe$_2$ as a model system, we demonstrate electron-beam-induced doping that enables reversible, precisely controlled carrier modulation exceeding $10^{13}$ cm$^{-2}$. The in-situ writing, erasing, and rewriting of ambipolar doping of nanoscale patterns was directly visualized by scanning microwave impedance microscopy. This mask-free, lithography-compatible approach can achieve precise band engineering within individual channels, yielding near-ideal subthreshold swings (~ 60 mV/dec) and finely tunable threshold voltages for both carrier types without specialized contact engineering. These capabilities allow on-demand realization of high performance logic, including CMOS inverters with high voltage gains and low power consumption, as well as NAND-to-NOR transitions on the same device via direct polarity rewriting. Our platform offers a scalable and versatile route for rapid prototyping of complementary electronics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_06318 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Rewritable Complementary Nanoelectronics Enabled by Electron-Beam Programmable Ambipolar Doping Lan, Qing Song, Wenqing Zhu, Siyin Zhou, Yi Wang, Lu Wei, Junjie Liu, Jiaqi Guo, Zejing Taniguchi, Takashi Watanabe, Kenji Huang, Hai Wang, Jingli Zhou, Xiaodong Zettl, Alex Shen, Jian Shi, Wu Materials Science The ability to reversibly and site-selectively tune ambipolar doping in a single semiconductor is crucial for reconfigurable electronics beyond silicon, but remains highly challenging. Here, we present a rewritable architecture based on electron-beam programmable field-effect transistors (FETs). Using WSe$_2$ as a model system, we demonstrate electron-beam-induced doping that enables reversible, precisely controlled carrier modulation exceeding $10^{13}$ cm$^{-2}$. The in-situ writing, erasing, and rewriting of ambipolar doping of nanoscale patterns was directly visualized by scanning microwave impedance microscopy. This mask-free, lithography-compatible approach can achieve precise band engineering within individual channels, yielding near-ideal subthreshold swings (~ 60 mV/dec) and finely tunable threshold voltages for both carrier types without specialized contact engineering. These capabilities allow on-demand realization of high performance logic, including CMOS inverters with high voltage gains and low power consumption, as well as NAND-to-NOR transitions on the same device via direct polarity rewriting. Our platform offers a scalable and versatile route for rapid prototyping of complementary electronics. |
| title | Rewritable Complementary Nanoelectronics Enabled by Electron-Beam Programmable Ambipolar Doping |
| topic | Materials Science |
| url | https://arxiv.org/abs/2512.06318 |