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| Autori principali: | , , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2025
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| Soggetti: | |
| Accesso online: | https://arxiv.org/abs/2512.06994 |
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| _version_ | 1866908697622478848 |
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| author | Pavolotsky, Alexey Joint, François Manjunatha, Udupa Sujit Belitsky, Victor Meledin, Denis Kojima, Takafumi Masui, Sho Narayanan, Ravishankar Desmaris, Vincent |
| author_facet | Pavolotsky, Alexey Joint, François Manjunatha, Udupa Sujit Belitsky, Victor Meledin, Denis Kojima, Takafumi Masui, Sho Narayanan, Ravishankar Desmaris, Vincent |
| contents | We report a Nb/Al-AlN /Nb superconducting tunnel junction process in which the AlN barrier is formed by plasma nitridation using a compact microwave electron-cyclotron-resonance (ECR) nitrogen plasma source integrated into a standard sputter cluster. This enables growth of uniform tunnel barriers across a broad range of specific resistances, with $R_n A$ down to $\approx 3,Ω,μ\mathrm{m}^2$. Junctions maintain excellent quality, exhibiting $R_j/R_n \ge 25$ at the highest barrier transparencies. We characterize resistivity, specific capacitance, and the evolution of junction parameters under room-temperature aging and thermal annealing. A consistent calibration of the junction specific capacitance $C_s$ versus $R_n A$ is established and independently validated by the performance of demonstrator SIS mixers designed using the extracted $C_s$. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_06994 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Fabrication and characterization of Nb/Al-AlN /Nb superconducting tunnel junctions Pavolotsky, Alexey Joint, François Manjunatha, Udupa Sujit Belitsky, Victor Meledin, Denis Kojima, Takafumi Masui, Sho Narayanan, Ravishankar Desmaris, Vincent Superconductivity We report a Nb/Al-AlN /Nb superconducting tunnel junction process in which the AlN barrier is formed by plasma nitridation using a compact microwave electron-cyclotron-resonance (ECR) nitrogen plasma source integrated into a standard sputter cluster. This enables growth of uniform tunnel barriers across a broad range of specific resistances, with $R_n A$ down to $\approx 3,Ω,μ\mathrm{m}^2$. Junctions maintain excellent quality, exhibiting $R_j/R_n \ge 25$ at the highest barrier transparencies. We characterize resistivity, specific capacitance, and the evolution of junction parameters under room-temperature aging and thermal annealing. A consistent calibration of the junction specific capacitance $C_s$ versus $R_n A$ is established and independently validated by the performance of demonstrator SIS mixers designed using the extracted $C_s$. |
| title | Fabrication and characterization of Nb/Al-AlN /Nb superconducting tunnel junctions |
| topic | Superconductivity |
| url | https://arxiv.org/abs/2512.06994 |