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| Main Authors: | , |
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| Format: | Preprint |
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2025
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| Online Access: | https://arxiv.org/abs/2512.07600 |
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| _version_ | 1866918238077583360 |
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| author | Saha, Shraman Kumar Guyot-Sionnest, Philippe |
| author_facet | Saha, Shraman Kumar Guyot-Sionnest, Philippe |
| contents | III-V colloidal quantum dots are widely studied for their applications as detectors and emitters from visible to short-wave infrared. They might also be used in the mid-infrared if they can be stably n-doped to access their intraband transitions. Mid-infrared intraband transitions are therefore studied for InAs, InAs/InP, and InAs/ZnSe colloidal quantum dots with an energy gap at 1.4 micron. Using electrochemistry, the quantum dot films show state-resolved mobility, state-resolved electron filling, and intraband absorption in the 3-8 micron range. The InAs/ZnSe films need a more reducing potential than InAs, but the InAs/InP films need a lower reduction potential. As a result, we found that dry films of InAs/InP dots show stable n-doping of the 1Se state, with a steady-state intraband absorption in the 3-5 micron range, and intraband luminescence at 5 micron. low-toxicity, high thermal stability, and stable n-doping, InAs quantum dots become an interesting material for mid-infrared applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_07600 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Mid-infrared intraband transitions in InAs colloidal quantum dots Saha, Shraman Kumar Guyot-Sionnest, Philippe Materials Science Chemical Physics III-V colloidal quantum dots are widely studied for their applications as detectors and emitters from visible to short-wave infrared. They might also be used in the mid-infrared if they can be stably n-doped to access their intraband transitions. Mid-infrared intraband transitions are therefore studied for InAs, InAs/InP, and InAs/ZnSe colloidal quantum dots with an energy gap at 1.4 micron. Using electrochemistry, the quantum dot films show state-resolved mobility, state-resolved electron filling, and intraband absorption in the 3-8 micron range. The InAs/ZnSe films need a more reducing potential than InAs, but the InAs/InP films need a lower reduction potential. As a result, we found that dry films of InAs/InP dots show stable n-doping of the 1Se state, with a steady-state intraband absorption in the 3-5 micron range, and intraband luminescence at 5 micron. low-toxicity, high thermal stability, and stable n-doping, InAs quantum dots become an interesting material for mid-infrared applications. |
| title | Mid-infrared intraband transitions in InAs colloidal quantum dots |
| topic | Materials Science Chemical Physics |
| url | https://arxiv.org/abs/2512.07600 |