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| Main Authors: | , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2512.08148 |
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| _version_ | 1866908699818196992 |
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| author | Zhao, He Lin Afrid, Sheikh Mohd Ta-Seen Yoon, Dongyoung Martin, Zachary Islam, Zakaria Chen, Sihan Zhang, Yue Huang, Pinshane Y. Rakheja, Shaloo van der Zande, Arend M. |
| author_facet | Zhao, He Lin Afrid, Sheikh Mohd Ta-Seen Yoon, Dongyoung Martin, Zachary Islam, Zakaria Chen, Sihan Zhang, Yue Huang, Pinshane Y. Rakheja, Shaloo van der Zande, Arend M. |
| contents | Understanding the interactions between strain, interfacial mechanics, and electrical performance is critical for designing beyond silicon electronics based on hetero-integrated 2D materials. Through combined experiment and simulation, we demonstrated and analyzed the enhancement of hole mobility in p-type monolayer $WSe_{2}$ field effect transistors (FETs) under biaxial compression. We tracked FET performance versus strain by incrementing compressive strain to $WSe_{2}$ channels via sequential AlOx deposition and performing intermediate photoluminescence and transport measurements. The hole mobility factor increased at a rate of 340 $\pm$ 95 %/%$ε$, and the on-current factor increased at a rate of 460 $\pm$ 340 %/%$ε$. Simulation revealed that the enhancement under compression arises primarily from a reduction in inter-valley scattering between the $Γ$--K valence bands, and the rate is robust against variations in carrier density, impurity density, or dielectric environment. These findings show that compressive strain is a powerful technique for enhancing performance in 2D p-FETs and that it is multiplicative with defect and doping engineering. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_08148 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Enhancing Hole Mobility in Monolayer $WSe_{2}$ p-FETs via Process-Induced Compression Zhao, He Lin Afrid, Sheikh Mohd Ta-Seen Yoon, Dongyoung Martin, Zachary Islam, Zakaria Chen, Sihan Zhang, Yue Huang, Pinshane Y. Rakheja, Shaloo van der Zande, Arend M. Materials Science Applied Physics Understanding the interactions between strain, interfacial mechanics, and electrical performance is critical for designing beyond silicon electronics based on hetero-integrated 2D materials. Through combined experiment and simulation, we demonstrated and analyzed the enhancement of hole mobility in p-type monolayer $WSe_{2}$ field effect transistors (FETs) under biaxial compression. We tracked FET performance versus strain by incrementing compressive strain to $WSe_{2}$ channels via sequential AlOx deposition and performing intermediate photoluminescence and transport measurements. The hole mobility factor increased at a rate of 340 $\pm$ 95 %/%$ε$, and the on-current factor increased at a rate of 460 $\pm$ 340 %/%$ε$. Simulation revealed that the enhancement under compression arises primarily from a reduction in inter-valley scattering between the $Γ$--K valence bands, and the rate is robust against variations in carrier density, impurity density, or dielectric environment. These findings show that compressive strain is a powerful technique for enhancing performance in 2D p-FETs and that it is multiplicative with defect and doping engineering. |
| title | Enhancing Hole Mobility in Monolayer $WSe_{2}$ p-FETs via Process-Induced Compression |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2512.08148 |