MBE obtained n-CdO:Eu p-Si heterojunctions -- electron beam induced profiling, electrical and structural properties
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arXiv
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| Autores principales: | , , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2025
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| Materias: | |
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| _version_ | 1866911310260731904 |
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| author | Przezdziecka, E Perlikowski, I Chusnutdinow, S Wierzbicka, A Adhikari, A Stachowicz, M Jakiela, R Zielony, E Wojnar, P Kozanecki, A |
| author_facet | Przezdziecka, E Perlikowski, I Chusnutdinow, S Wierzbicka, A Adhikari, A Stachowicz, M Jakiela, R Zielony, E Wojnar, P Kozanecki, A |
| contents | The present investigation reports on the fabrication and characterization of heterojunctions based on in situ Eu doped CdO layers, which were deposited on p-type silicon using the plasma assisted molecular beam epitaxy (PA MBE) method. The structural and optical properties of the cadmium oxide (CdO) films were investigated using X ray diffraction and Fourier transform infrared spectroscopy (FTIR). The CdO Eu films are polycrystalline. The electrical properties of the p n heterojunction composed of transparent n CdO Eu and p Si semiconductors were investigated by current voltage and electron beam-induced current (EBIC) measurements. Current voltage measurements demonstrate good junction characteristics with a rectifying ratio of 20 . EBIC measurements allowed us to calculate the diffusion length of minority carriers and the precise location of the depleted area at the CdO and Si interfaces. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_08587 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | MBE obtained n-CdO:Eu p-Si heterojunctions -- electron beam induced profiling, electrical and structural properties Przezdziecka, E Perlikowski, I Chusnutdinow, S Wierzbicka, A Adhikari, A Stachowicz, M Jakiela, R Zielony, E Wojnar, P Kozanecki, A Materials Science The present investigation reports on the fabrication and characterization of heterojunctions based on in situ Eu doped CdO layers, which were deposited on p-type silicon using the plasma assisted molecular beam epitaxy (PA MBE) method. The structural and optical properties of the cadmium oxide (CdO) films were investigated using X ray diffraction and Fourier transform infrared spectroscopy (FTIR). The CdO Eu films are polycrystalline. The electrical properties of the p n heterojunction composed of transparent n CdO Eu and p Si semiconductors were investigated by current voltage and electron beam-induced current (EBIC) measurements. Current voltage measurements demonstrate good junction characteristics with a rectifying ratio of 20 . EBIC measurements allowed us to calculate the diffusion length of minority carriers and the precise location of the depleted area at the CdO and Si interfaces. |
| title | MBE obtained n-CdO:Eu p-Si heterojunctions -- electron beam induced profiling, electrical and structural properties |
| topic | Materials Science |
| url | https://arxiv.org/abs/2512.08587 |