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| Format: | Preprint |
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2025
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| Online-Zugang: | https://arxiv.org/abs/2512.08719 |
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| author | Khan, Adam H. Kim, Tae Sung Guss, Gabe Laurence, Ted A. Ly, Sonny S. Tumkur, Thejaswi U. Piracha, Afaq H. |
| author_facet | Khan, Adam H. Kim, Tae Sung Guss, Gabe Laurence, Ted A. Ly, Sonny S. Tumkur, Thejaswi U. Piracha, Afaq H. |
| contents | Dislocations and polishing-induced defect networks in synthetic diamond generate local strain fields that broaden Raman features and limit optical, thermal, and electronic performance. Sub-melt laser annealing has emerged as a route to repair near-surface defects without graphitization, yet quantitative evidence of densification, defect depletion, and property recovery remains limited. Here, we show that nanosecond pulsed-laser annealing (PLA) can relax dislocation-associated strain in single-crystal CVD diamond by compacting and reorganizing the damaged near-surface region. Single- and two-pulse PLA were applied, and structural evolution was quantified using co-registered ISO 25178 white-light interferometry, depth-resolved Raman spectroscopy, and cross-sectional STEM with geometric phase analysis (GPA). Across a 5x6 grid(n = 30), responsive regions show large reductions in local slope (Sdq 45-65%), developed area (Sdr 60-90%), height spread (Sp, Sz 30-65%), void volume (Vv 57-60%), and roughness amplitude (Sa, Sq 48-57%), consistent with densification of ~4-6.5 nm. Raman profiling reveals narrowing of the diamond line and improved spectral uniformity to depths of ~2-3 μm, indicating relaxation of dislocation-mediated strain beyond the compaction layer. STEM-GPA strain maps confirm smoother strain fields, reduced hotspots, and redistribution of localized strain concentrations after PLA. These results show that sub-melt PLA reduces dislocation-driven strain by compacting surface-connected free volume and reorganizing defect networks. The approach provides a scalable path to upgrade industrial-grade diamond including homoepitaxial, heteroepitaxial, and polycrystalline CVD to low-defect, device-ready surfaces relevant to high-power electronics, photonics, and quantum substrates. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_08719 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Reducing dislocation defect levels via sub-melt nanosecond pulsed-laser induced densification of diamond Khan, Adam H. Kim, Tae Sung Guss, Gabe Laurence, Ted A. Ly, Sonny S. Tumkur, Thejaswi U. Piracha, Afaq H. Applied Physics Materials Science Dislocations and polishing-induced defect networks in synthetic diamond generate local strain fields that broaden Raman features and limit optical, thermal, and electronic performance. Sub-melt laser annealing has emerged as a route to repair near-surface defects without graphitization, yet quantitative evidence of densification, defect depletion, and property recovery remains limited. Here, we show that nanosecond pulsed-laser annealing (PLA) can relax dislocation-associated strain in single-crystal CVD diamond by compacting and reorganizing the damaged near-surface region. Single- and two-pulse PLA were applied, and structural evolution was quantified using co-registered ISO 25178 white-light interferometry, depth-resolved Raman spectroscopy, and cross-sectional STEM with geometric phase analysis (GPA). Across a 5x6 grid(n = 30), responsive regions show large reductions in local slope (Sdq 45-65%), developed area (Sdr 60-90%), height spread (Sp, Sz 30-65%), void volume (Vv 57-60%), and roughness amplitude (Sa, Sq 48-57%), consistent with densification of ~4-6.5 nm. Raman profiling reveals narrowing of the diamond line and improved spectral uniformity to depths of ~2-3 μm, indicating relaxation of dislocation-mediated strain beyond the compaction layer. STEM-GPA strain maps confirm smoother strain fields, reduced hotspots, and redistribution of localized strain concentrations after PLA. These results show that sub-melt PLA reduces dislocation-driven strain by compacting surface-connected free volume and reorganizing defect networks. The approach provides a scalable path to upgrade industrial-grade diamond including homoepitaxial, heteroepitaxial, and polycrystalline CVD to low-defect, device-ready surfaces relevant to high-power electronics, photonics, and quantum substrates. |
| title | Reducing dislocation defect levels via sub-melt nanosecond pulsed-laser induced densification of diamond |
| topic | Applied Physics Materials Science |
| url | https://arxiv.org/abs/2512.08719 |