Scalable van der Waals Photonics: High-Refractive-Index Gallium Sulfide Films with Single-Crystal Optical Properties
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| Main Authors: | , , , , , , , , , , , , , , , , , |
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| Format: | Preprint |
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2025
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| author | Slavich, Aleksandr Ermolaev, Georgy Grudinin, Dmitriy Tatmyshevskiy, Mikhail Syuy, Alexander Pak, Nikolay Yakubovsky, Dmitry Mironov, Mikhail Toksumakov, Adilet Melentev, Alexander Zhukova, Elena Minnekhanov, Anton Tselikov, Gleb Kruglov, Ivan Novikov, Sergey M. Vyshnevyy, Andrey Arsenin, Aleksey Volkov, Valentyn |
| author_facet | Slavich, Aleksandr Ermolaev, Georgy Grudinin, Dmitriy Tatmyshevskiy, Mikhail Syuy, Alexander Pak, Nikolay Yakubovsky, Dmitry Mironov, Mikhail Toksumakov, Adilet Melentev, Alexander Zhukova, Elena Minnekhanov, Anton Tselikov, Gleb Kruglov, Ivan Novikov, Sergey M. Vyshnevyy, Andrey Arsenin, Aleksey Volkov, Valentyn |
| contents | The integration of high-refractive-index dielectrics into scalable photonic architectures is foundational to advancing integrated circuits and augmented reality (AR) displays. Van der Waals (vdW) materials offer exceptional optical properties, including high refractive indices and giant anisotropy, but their implementation is constrained by the small area and uncontrolled thickness of mechanically exfoliated flakes. Here, we demonstrate that atomic layer deposition (ALD) grown gallium sulfide (GaS) overcomes the trade-off between high optical performance and manufacturability, emerging as a large-scale vdW dielectric platform. Through rigorous optical and structural benchmarking against pristine single crystals, we establish that the optical constants (n, k) of ALD-GaS are virtually indistinguishable from single-crystal counterparts. By leveraging the retained out-of-plane anisotropy, we demonstrate that ALD-GaS enables superior suppression of crosstalk in densely integrated waveguides compared to conventional scalable high-index platforms. Our findings establish ALD-GaS as a technologically viable pathway for implementing anisotropic vdW materials in visible-spectrum photonics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_09255 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Scalable van der Waals Photonics: High-Refractive-Index Gallium Sulfide Films with Single-Crystal Optical Properties Slavich, Aleksandr Ermolaev, Georgy Grudinin, Dmitriy Tatmyshevskiy, Mikhail Syuy, Alexander Pak, Nikolay Yakubovsky, Dmitry Mironov, Mikhail Toksumakov, Adilet Melentev, Alexander Zhukova, Elena Minnekhanov, Anton Tselikov, Gleb Kruglov, Ivan Novikov, Sergey M. Vyshnevyy, Andrey Arsenin, Aleksey Volkov, Valentyn Optics Materials Science Applied Physics The integration of high-refractive-index dielectrics into scalable photonic architectures is foundational to advancing integrated circuits and augmented reality (AR) displays. Van der Waals (vdW) materials offer exceptional optical properties, including high refractive indices and giant anisotropy, but their implementation is constrained by the small area and uncontrolled thickness of mechanically exfoliated flakes. Here, we demonstrate that atomic layer deposition (ALD) grown gallium sulfide (GaS) overcomes the trade-off between high optical performance and manufacturability, emerging as a large-scale vdW dielectric platform. Through rigorous optical and structural benchmarking against pristine single crystals, we establish that the optical constants (n, k) of ALD-GaS are virtually indistinguishable from single-crystal counterparts. By leveraging the retained out-of-plane anisotropy, we demonstrate that ALD-GaS enables superior suppression of crosstalk in densely integrated waveguides compared to conventional scalable high-index platforms. Our findings establish ALD-GaS as a technologically viable pathway for implementing anisotropic vdW materials in visible-spectrum photonics. |
| title | Scalable van der Waals Photonics: High-Refractive-Index Gallium Sulfide Films with Single-Crystal Optical Properties |
| topic | Optics Materials Science Applied Physics |
| url | https://arxiv.org/abs/2512.09255 |