Beta-Ga2O3 Sub-Micron FinFETs with Si Delta-Doped Channel Modulating Charge Density Above 3x10^13 cm^-2
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arXiv
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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| _version_ | 1866917135920398336 |
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| author | Das, Nabasindhu Gorsak, Cameron Kashyap, Ankita Gilankar, Advait Tripathi, Pushpanshu Paranjape, Salil A Thornton, Trevor Nair, Hari Kalarickal, Nidhin Kurian |
| author_facet | Das, Nabasindhu Gorsak, Cameron Kashyap, Ankita Gilankar, Advait Tripathi, Pushpanshu Paranjape, Salil A Thornton, Trevor Nair, Hari Kalarickal, Nidhin Kurian |
| contents | This letter reports on the design and demonstration of high-performance Beta-Ga2O3 FinFETs utilizing MOCVD-grown Si delta-doped channels to achieve enhanced carrier transport and electrostatic control. A record high sheet charge density of 3.3x10^13 cm^-2 was modulated using 100 nm fin channels, delivering a peak drain current of 410 mA/mm and a peak transconductance of 60 mS/mm. The FinFET architecture enables strong gate modulation, achieving a high Ion/Ioff ratio between 10^8 and 10^9. A low contact resistance of 0.42 ohm.mm was achieved to the Si delta-doped channel using MOCVD contact regrowth. Small-signal RF characterization revealed a current-gain cutoff frequency (fT) of 3.8 GHz and a maximum oscillation frequency (fMAX) of 2.1 GHz for a 0.8-micrometer gate length. These results demonstrate the efficacy of combining precision delta-doping with a 3D FinFET geometry for high-frequency Beta-Ga2O3 electronics, establishing a platform for future RF and high-power applications |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_09279 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Beta-Ga2O3 Sub-Micron FinFETs with Si Delta-Doped Channel Modulating Charge Density Above 3x10^13 cm^-2 Das, Nabasindhu Gorsak, Cameron Kashyap, Ankita Gilankar, Advait Tripathi, Pushpanshu Paranjape, Salil A Thornton, Trevor Nair, Hari Kalarickal, Nidhin Kurian Applied Physics This letter reports on the design and demonstration of high-performance Beta-Ga2O3 FinFETs utilizing MOCVD-grown Si delta-doped channels to achieve enhanced carrier transport and electrostatic control. A record high sheet charge density of 3.3x10^13 cm^-2 was modulated using 100 nm fin channels, delivering a peak drain current of 410 mA/mm and a peak transconductance of 60 mS/mm. The FinFET architecture enables strong gate modulation, achieving a high Ion/Ioff ratio between 10^8 and 10^9. A low contact resistance of 0.42 ohm.mm was achieved to the Si delta-doped channel using MOCVD contact regrowth. Small-signal RF characterization revealed a current-gain cutoff frequency (fT) of 3.8 GHz and a maximum oscillation frequency (fMAX) of 2.1 GHz for a 0.8-micrometer gate length. These results demonstrate the efficacy of combining precision delta-doping with a 3D FinFET geometry for high-frequency Beta-Ga2O3 electronics, establishing a platform for future RF and high-power applications |
| title | Beta-Ga2O3 Sub-Micron FinFETs with Si Delta-Doped Channel Modulating Charge Density Above 3x10^13 cm^-2 |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2512.09279 |