Breakdown characteristics of SiNx with different stoichiometries for resistive memories
Fuente:
arXiv
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| Autori principali: | , , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2025
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| Soggetti: | |
| Accesso online: | |
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| _version_ | 1866912756890861568 |
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| author | Mavropoulis, A. E. Kanellopoulos, I. Pissanos, G. Samara, G. Vasileiadis, N. Stavroulakis, E. Normand, P. Sirakoulis, G. Ch. Dimitrakis, P. |
| author_facet | Mavropoulis, A. E. Kanellopoulos, I. Pissanos, G. Samara, G. Vasileiadis, N. Stavroulakis, E. Normand, P. Sirakoulis, G. Ch. Dimitrakis, P. |
| contents | The breakdown characteristics of SiNx layers with different stoichiometries are explored. The stoichiometry of SiNx is modified by changing the gas flow rates during the LPCVD deposition. These layers are suitable for RRAM cells. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_09681 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Breakdown characteristics of SiNx with different stoichiometries for resistive memories Mavropoulis, A. E. Kanellopoulos, I. Pissanos, G. Samara, G. Vasileiadis, N. Stavroulakis, E. Normand, P. Sirakoulis, G. Ch. Dimitrakis, P. Materials Science Applied Physics The breakdown characteristics of SiNx layers with different stoichiometries are explored. The stoichiometry of SiNx is modified by changing the gas flow rates during the LPCVD deposition. These layers are suitable for RRAM cells. |
| title | Breakdown characteristics of SiNx with different stoichiometries for resistive memories |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2512.09681 |