Resistance Switching Properties of Stoichiometric and Nitrogen Implanted Silicon Nitride Nanolayers on N and P-Type Si Substrates
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arXiv
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| Autores principales: | , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2025
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| _version_ | 1866912756896104448 |
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| author | Mavropoulis, A. E. Karakolis, P. Vasileiadis, N. Sygellou, L. Stavroulakis, E. Ioannou-Sougleridis, V. Normand, P. Sirakoulis, G. Ch. Dimitrakis, P. |
| author_facet | Mavropoulis, A. E. Karakolis, P. Vasileiadis, N. Sygellou, L. Stavroulakis, E. Ioannou-Sougleridis, V. Normand, P. Sirakoulis, G. Ch. Dimitrakis, P. |
| contents | This paper examines the resistive switching characteristics of LPCVD SiNx MNOS ReRAM cells on both heavily doped n- and p-type silicon substrates, focusing on the effects of nitrogen doping. Detailed comparisons of electrical properties through nitrogen implantation reveal variations in trap density and SET-RESET voltages between n and p conductivity Si substrates. Impedance spectroscopy further elucidates the conductive path formation and its resistance. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_09684 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Resistance Switching Properties of Stoichiometric and Nitrogen Implanted Silicon Nitride Nanolayers on N and P-Type Si Substrates Mavropoulis, A. E. Karakolis, P. Vasileiadis, N. Sygellou, L. Stavroulakis, E. Ioannou-Sougleridis, V. Normand, P. Sirakoulis, G. Ch. Dimitrakis, P. Materials Science Applied Physics This paper examines the resistive switching characteristics of LPCVD SiNx MNOS ReRAM cells on both heavily doped n- and p-type silicon substrates, focusing on the effects of nitrogen doping. Detailed comparisons of electrical properties through nitrogen implantation reveal variations in trap density and SET-RESET voltages between n and p conductivity Si substrates. Impedance spectroscopy further elucidates the conductive path formation and its resistance. |
| title | Resistance Switching Properties of Stoichiometric and Nitrogen Implanted Silicon Nitride Nanolayers on N and P-Type Si Substrates |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2512.09684 |