Mechanical Detuning of Exciton-Phonon Resonance in WS2
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arXiv
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| Format: | Preprint |
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2025
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| _version_ | 1866912982556999680 |
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| author | Rodríguez, Álvaro Munuera, Carmen Castellanos-Gomez, Andres |
| author_facet | Rodríguez, Álvaro Munuera, Carmen Castellanos-Gomez, Andres |
| contents | Controlling resonant Raman scattering in two-dimensional semiconductors typically requires tuning the excitation energy to match excitonic transitions. Here we show that mechanical deformation can achieve the same effect without changing the laser energy, enabling a controlled transition between resonant and non-resonant Raman scattering at fixed excitation. By applying biaxial strain up to 1.3% to WS2, the B exciton is red-shifted by 180 meV. This large excitonic shift leads to a pronounced collapse of the double-resonant 2LA(M) mode under 532 nm excitation, quantitatively described by a resonance model formulated in terms of the B exciton energy. Meanwhile, first-order phonons remain narrow and reversible, confirming elastic deformation and efficient strain transfer. These results establish mechanical strain as an effective knob to control exciton-phonon mediated light-matter interactions. They enable deterministic and reversible tuning of resonance-enhanced Raman scattering and excitonic optical responses in layered semiconductors. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_09783 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Mechanical Detuning of Exciton-Phonon Resonance in WS2 Rodríguez, Álvaro Munuera, Carmen Castellanos-Gomez, Andres Materials Science Mesoscale and Nanoscale Physics Controlling resonant Raman scattering in two-dimensional semiconductors typically requires tuning the excitation energy to match excitonic transitions. Here we show that mechanical deformation can achieve the same effect without changing the laser energy, enabling a controlled transition between resonant and non-resonant Raman scattering at fixed excitation. By applying biaxial strain up to 1.3% to WS2, the B exciton is red-shifted by 180 meV. This large excitonic shift leads to a pronounced collapse of the double-resonant 2LA(M) mode under 532 nm excitation, quantitatively described by a resonance model formulated in terms of the B exciton energy. Meanwhile, first-order phonons remain narrow and reversible, confirming elastic deformation and efficient strain transfer. These results establish mechanical strain as an effective knob to control exciton-phonon mediated light-matter interactions. They enable deterministic and reversible tuning of resonance-enhanced Raman scattering and excitonic optical responses in layered semiconductors. |
| title | Mechanical Detuning of Exciton-Phonon Resonance in WS2 |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2512.09783 |