Comparison of time-resolved photoluminescence and deep-level transient spectroscopy defect evaluations in an InAs nBn detector subjected to in-situ and ex-situ 63 MeV proton irradiation

Documenti analoghi

• InAs quantum dots grown on GaAs (100) surfaces subjected to novel in-situ treatments
  di: V. H. Méndez-García
  Pubblicazione: (2005)
• Measurements of proton hardness factors in silicon at energies between 10 MeV and 25 MeV
  di: Liu, E., et al.
  Pubblicazione: (2024)
• Measurement of the Gerasimov-Drell-Hearn integrand for proton and deuteron from 200 to 1400 MeV
  di: Pedroni, P., et al.
  Pubblicazione: (2026)
• Self-Directed Professional Learning of School Librarians
  di: Mary Maestas
  Pubblicazione: (2023)
• Gain characterization of LGAD sensors with beta particles and 28-MeV protons
  di: Farook, Mohamed Hijas Mohamed, et al.
  Pubblicazione: (2025)