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Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate

Fuente: arXiv

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Détails bibliographiques
Auteurs principaux:	Limame, Imad, Ludewig, Peter, Koulas-Simos, Aris, Palekar, Chirag C., Donges, Jan, Shih, Ching-Wen, Gaur, Kartik, Tripathi, Sarthak, Rodt, Sven, Stolz, Wolfgang, Volz, Kerstin, Reitzenstein, Stephan
Format:	Preprint
Publié:	2025
Sujets:	Mesoscale and Nanoscale Physics
Accès en ligne:	Acceder al recurso
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

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