Switching of topological phase transition from semiconductor to ideal Weyl states in Cu$_2$SnSe$_3$ family of materials
Fuente:
arXiv
Saved in:
| Main Author: | |
|---|---|
| Format: | Preprint |
| Published: |
2025
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866917138006016000 |
|---|---|
| author | Li, Huan |
| author_facet | Li, Huan |
| contents | The exploration of topological phase transition (TPT) mechanisms constitutes a central theme in quantum materials research. Conventionally, transitions between Weyl semimetals (WSMs) and other topological states rely on the breaking of time-reversal symmetry (TRS) or precise manipulation of lattice symmetry, thus constraints the available control strategies and restrict the scope of viable material systems. In this work, we propose a novel mechanism for TPT that operates without TRS breaking or lattice symmetry modification: a class of semiconductors can be directly transformed into an ideal WSM via bandgap closure. This transition is driven by chemical doping, which simultaneously modulates the band gap and enhances spin-orbit coupling (SOC), leading to band inversion between the valence and conduction bands and thereby triggering the TPT. Using first-principles calculations, we demonstrate the feasibility of this mechanism in the Cu$_2$SnSe$_3$ family of materials, where two pairs of Weyl points emerge with energies extremely close to the Fermi level. The bulk Fermi surface becomes nearly point-like, while the surface Fermi surface consists exclusively of Fermi arcs. This symmetry-independent mechanism bypasses the constraints of conventional symmetry-based engineering, and also offers an ideal platform for probing the anomalous transport properties of WSMs. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_10201 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Switching of topological phase transition from semiconductor to ideal Weyl states in Cu$_2$SnSe$_3$ family of materials Li, Huan Materials Science Strongly Correlated Electrons The exploration of topological phase transition (TPT) mechanisms constitutes a central theme in quantum materials research. Conventionally, transitions between Weyl semimetals (WSMs) and other topological states rely on the breaking of time-reversal symmetry (TRS) or precise manipulation of lattice symmetry, thus constraints the available control strategies and restrict the scope of viable material systems. In this work, we propose a novel mechanism for TPT that operates without TRS breaking or lattice symmetry modification: a class of semiconductors can be directly transformed into an ideal WSM via bandgap closure. This transition is driven by chemical doping, which simultaneously modulates the band gap and enhances spin-orbit coupling (SOC), leading to band inversion between the valence and conduction bands and thereby triggering the TPT. Using first-principles calculations, we demonstrate the feasibility of this mechanism in the Cu$_2$SnSe$_3$ family of materials, where two pairs of Weyl points emerge with energies extremely close to the Fermi level. The bulk Fermi surface becomes nearly point-like, while the surface Fermi surface consists exclusively of Fermi arcs. This symmetry-independent mechanism bypasses the constraints of conventional symmetry-based engineering, and also offers an ideal platform for probing the anomalous transport properties of WSMs. |
| title | Switching of topological phase transition from semiconductor to ideal Weyl states in Cu$_2$SnSe$_3$ family of materials |
| topic | Materials Science Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2512.10201 |