Response times of two-dimensional photodetectors limited by intrinsic resistance and capacitance

Fuente: arXiv
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Main Authors: Safonov, Ilya, Svintsov, Dmitry
Format: Preprint
Published: 2025
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author Safonov, Ilya
Svintsov, Dmitry
author_facet Safonov, Ilya
Svintsov, Dmitry
contents Most contemporary architectures of photodetectors based on two-dimensional materials include global gates for carrier density control and local p-n junctions in the channel. We study the dependence of photocurrent in such detectors on the light modulation frequency, fully taking into account the effects of distributed resistance and gate-channel capacitance. The decay of photocurrent with modulation frequency governs the response time. We find that the maximum modulation frequency is largely determined by the position of light-sensitive junction with respect to the middle of the channel. Largest modulation frequency is achieved for junctions in immediate vicinity of either source or drain contacts, while fast roll-off of the modulation characteristic is observed for junction in the middle of the channel.
format Preprint
id arxiv_https___arxiv_org_abs_2512_11497
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Response times of two-dimensional photodetectors limited by intrinsic resistance and capacitance
Safonov, Ilya
Svintsov, Dmitry
Applied Physics
Most contemporary architectures of photodetectors based on two-dimensional materials include global gates for carrier density control and local p-n junctions in the channel. We study the dependence of photocurrent in such detectors on the light modulation frequency, fully taking into account the effects of distributed resistance and gate-channel capacitance. The decay of photocurrent with modulation frequency governs the response time. We find that the maximum modulation frequency is largely determined by the position of light-sensitive junction with respect to the middle of the channel. Largest modulation frequency is achieved for junctions in immediate vicinity of either source or drain contacts, while fast roll-off of the modulation characteristic is observed for junction in the middle of the channel.
title Response times of two-dimensional photodetectors limited by intrinsic resistance and capacitance
topic Applied Physics
url https://arxiv.org/abs/2512.11497