Response times of two-dimensional photodetectors limited by intrinsic resistance and capacitance
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arXiv
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| Format: | Preprint |
| Published: |
2025
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| _version_ | 1866914197595488256 |
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| author | Safonov, Ilya Svintsov, Dmitry |
| author_facet | Safonov, Ilya Svintsov, Dmitry |
| contents | Most contemporary architectures of photodetectors based on two-dimensional materials include global gates for carrier density control and local p-n junctions in the channel. We study the dependence of photocurrent in such detectors on the light modulation frequency, fully taking into account the effects of distributed resistance and gate-channel capacitance. The decay of photocurrent with modulation frequency governs the response time. We find that the maximum modulation frequency is largely determined by the position of light-sensitive junction with respect to the middle of the channel. Largest modulation frequency is achieved for junctions in immediate vicinity of either source or drain contacts, while fast roll-off of the modulation characteristic is observed for junction in the middle of the channel. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_11497 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Response times of two-dimensional photodetectors limited by intrinsic resistance and capacitance Safonov, Ilya Svintsov, Dmitry Applied Physics Most contemporary architectures of photodetectors based on two-dimensional materials include global gates for carrier density control and local p-n junctions in the channel. We study the dependence of photocurrent in such detectors on the light modulation frequency, fully taking into account the effects of distributed resistance and gate-channel capacitance. The decay of photocurrent with modulation frequency governs the response time. We find that the maximum modulation frequency is largely determined by the position of light-sensitive junction with respect to the middle of the channel. Largest modulation frequency is achieved for junctions in immediate vicinity of either source or drain contacts, while fast roll-off of the modulation characteristic is observed for junction in the middle of the channel. |
| title | Response times of two-dimensional photodetectors limited by intrinsic resistance and capacitance |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2512.11497 |