In situ Study of p-NiO Film Quality at High Temperatures up to 1100 deg C
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arXiv
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| Main Authors: | , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| _version_ | 1866917144223023104 |
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| author | Ellis, Hunter Duersch, Bobby G. Li, Botong Rahaman, Imteaz Pierce, Jim Scarpulla, Michael A. Fu, Kai |
| author_facet | Ellis, Hunter Duersch, Bobby G. Li, Botong Rahaman, Imteaz Pierce, Jim Scarpulla, Michael A. Fu, Kai |
| contents | NiO is a promising p-type material for photovoltaics and power electronics, but its temperature limits remain unclear. Using in situ high-temperature X-ray diffraction (HT-XRD) from 30 to 1100 C, we track the structural evolution of NiO thin films in air. The film crystallizes from an amorphous phase to cubic NiO between 300 and 400 C, where the emergence and growth of the (111) diffraction peak correlate with an increase in electrical resistivity. Further increases in temperature lead to improved crystallinity and higher resistivity. At 1100 C, the formation of Ni2O3 is observed, resulting in a highly resistive film. This study establishes a clear correlation between phase evolution, crystallinity, and resistive behavior in NiO thin films. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2512_12020 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | In situ Study of p-NiO Film Quality at High Temperatures up to 1100 deg C Ellis, Hunter Duersch, Bobby G. Li, Botong Rahaman, Imteaz Pierce, Jim Scarpulla, Michael A. Fu, Kai Materials Science NiO is a promising p-type material for photovoltaics and power electronics, but its temperature limits remain unclear. Using in situ high-temperature X-ray diffraction (HT-XRD) from 30 to 1100 C, we track the structural evolution of NiO thin films in air. The film crystallizes from an amorphous phase to cubic NiO between 300 and 400 C, where the emergence and growth of the (111) diffraction peak correlate with an increase in electrical resistivity. Further increases in temperature lead to improved crystallinity and higher resistivity. At 1100 C, the formation of Ni2O3 is observed, resulting in a highly resistive film. This study establishes a clear correlation between phase evolution, crystallinity, and resistive behavior in NiO thin films. |
| title | In situ Study of p-NiO Film Quality at High Temperatures up to 1100 deg C |
| topic | Materials Science |
| url | https://arxiv.org/abs/2512.12020 |