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Auteurs principaux: Huaman, Angiolo, Rosas-Hernandez, Luis Enrique, Barraza-Lopez, Salvador
Format: Preprint
Publié: 2025
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Accès en ligne:https://arxiv.org/abs/2512.12079
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author Huaman, Angiolo
Rosas-Hernandez, Luis Enrique
Barraza-Lopez, Salvador
author_facet Huaman, Angiolo
Rosas-Hernandez, Luis Enrique
Barraza-Lopez, Salvador
contents The second-order optical susceptibility of semiconductors $χ_{ijk}^{(2)}(-2ω;ω,ω)$ finds application in metrology, spectroscopy, telecommunications, material characterization, and quantum information. Pioneering calculations of $χ_{ijk}^{(2)}(-2ω;ω,ω)$ utilized non-orthogonal Gaussian orbitals centered at atoms. That formulation transitioned into plane-wave-based algorithms as time went by. As of late, nevertheless, multiple tools for calculating optical susceptibilities have recast the problem using Wannier ({\em i.e.}, {\em localized}) orbitals, making a comeback onto frameworks based on localized basis sets. Here, we present an approach for calculating $χ_{ijk}^{(2)}(-2ω;ω,ω)$ reliant on numerical pseudoatomic orbitals (PAOs) within perturbation theory in the velocity gauge. Its salient feature is a calculation of `Slater-Koster-like' two-center integrals of the momentum operator in between PAOs identified by symmetry. The approach was successfully tested on paradigmatic cubic silicon carbide (3C-SiC) and gallium arsenide, for which linear responses are contributed as well.
format Preprint
id arxiv_https___arxiv_org_abs_2512_12079
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Perturbative second-order optical susceptibility of bulk materials: a symmetry-enforced return to non-orthogonal localized basis sets
Huaman, Angiolo
Rosas-Hernandez, Luis Enrique
Barraza-Lopez, Salvador
Materials Science
The second-order optical susceptibility of semiconductors $χ_{ijk}^{(2)}(-2ω;ω,ω)$ finds application in metrology, spectroscopy, telecommunications, material characterization, and quantum information. Pioneering calculations of $χ_{ijk}^{(2)}(-2ω;ω,ω)$ utilized non-orthogonal Gaussian orbitals centered at atoms. That formulation transitioned into plane-wave-based algorithms as time went by. As of late, nevertheless, multiple tools for calculating optical susceptibilities have recast the problem using Wannier ({\em i.e.}, {\em localized}) orbitals, making a comeback onto frameworks based on localized basis sets. Here, we present an approach for calculating $χ_{ijk}^{(2)}(-2ω;ω,ω)$ reliant on numerical pseudoatomic orbitals (PAOs) within perturbation theory in the velocity gauge. Its salient feature is a calculation of `Slater-Koster-like' two-center integrals of the momentum operator in between PAOs identified by symmetry. The approach was successfully tested on paradigmatic cubic silicon carbide (3C-SiC) and gallium arsenide, for which linear responses are contributed as well.
title Perturbative second-order optical susceptibility of bulk materials: a symmetry-enforced return to non-orthogonal localized basis sets
topic Materials Science
url https://arxiv.org/abs/2512.12079