Radio-frequency assisted switching in perpendicular magnetic tunnel junctions
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arXiv
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| Main Authors: | , , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866909012933476352 |
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| author | Hayward, Mark Perna, Salvatore d'Aquino, Massimiliano Serpico, Claudio Jung, Wonjoon Dai, Chunhui Braganca, Patrick M. Krivorotov, Ilya N. |
| author_facet | Hayward, Mark Perna, Salvatore d'Aquino, Massimiliano Serpico, Claudio Jung, Wonjoon Dai, Chunhui Braganca, Patrick M. Krivorotov, Ilya N. |
| contents | Spin-transfer torque magnetic random-access memory (STT-MRAM) relies on nanoscale magnetic tunnel junctions (MTJs) as its fundamental building blocks. Next-generation STT-MRAM requires strategies that simultaneously improve switching energy efficiency and device endurance. Here, we present the first study of perpendicular STT-MRAM writing assisted by radio-frequency (RF) spin torque. We show that applying a small-amplitude RF pulse prior to a direct-current (DC) writing pulse enhances the MTJ switching probability, with the efficiency gain increasing at lower RF frequencies. This RF+DC writing scheme enables shorter DC pulses, thereby improving device endurance. Analytical and numerical modeling qualitatively reproduces the experimental trends, while quantitative discrepancies indicate that realistic MTJ properties beyond idealized models play an important role in RF-assisted switching. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_12172 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Radio-frequency assisted switching in perpendicular magnetic tunnel junctions Hayward, Mark Perna, Salvatore d'Aquino, Massimiliano Serpico, Claudio Jung, Wonjoon Dai, Chunhui Braganca, Patrick M. Krivorotov, Ilya N. Mesoscale and Nanoscale Physics Spin-transfer torque magnetic random-access memory (STT-MRAM) relies on nanoscale magnetic tunnel junctions (MTJs) as its fundamental building blocks. Next-generation STT-MRAM requires strategies that simultaneously improve switching energy efficiency and device endurance. Here, we present the first study of perpendicular STT-MRAM writing assisted by radio-frequency (RF) spin torque. We show that applying a small-amplitude RF pulse prior to a direct-current (DC) writing pulse enhances the MTJ switching probability, with the efficiency gain increasing at lower RF frequencies. This RF+DC writing scheme enables shorter DC pulses, thereby improving device endurance. Analytical and numerical modeling qualitatively reproduces the experimental trends, while quantitative discrepancies indicate that realistic MTJ properties beyond idealized models play an important role in RF-assisted switching. |
| title | Radio-frequency assisted switching in perpendicular magnetic tunnel junctions |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2512.12172 |