Cover Image

Mechanisms of inductively coupled BCl3-plasma interaction with the GaN surfaceMechanisms of inductively coupled BCl3-plasma interaction with the GaN surface

Fuente: arXiv

Saved in:

Bibliographic Details
Main Authors:	Kobelev, Anton, Andrianov, Nikolay, Barsukov, Yuri, Smirnov, Alexander
Format:	Preprint
Published:	2025
Subjects:	Chemical Physics
Online Access:	Acceder al recurso
Tags:	Add Tag No Tags, Be the first to tag this record!

Similar Items

Distinguishing Inner and Outer-Sphere Hot Electron Transfer in Au/p-GaN Photocathodes
by: Kiani, Fatemeh, et al.
Published: (2024)

Epitaxial high-K AlBN barrier GaN HEMTs
by: Savant, Chandrashekhar, et al.
Published: (2025)

Impact of electron beam propagation on high-resolution quantitative chemical analysis of 1 nm-wide GaN/AlGaN quantum wells
by: Castioni, Florian, et al.
Published: (2025)

Surface charge induced $sp^3$-$sp^2$ transformation: new energy optimization universal mechanism of (4x4) reconstruction of stoichiometric GaN(0001) surface
by: Strak, Paweł, et al.
Published: (2024)

Transition Metal Dichalcogenide MoS${}_2$: oxygen and fluorine functionalization for selective plasma processing
by: Polyachenko, Yury, et al.
Published: (2026)

NO2 adsorption on GaN surface and its interaction with the yellow-luminescence-associated surface state
by: Turkulets, Yury, et al.
Published: (2024)

Quantum Chemistry Model of Surface Reactions and Kinetic Model of Diamond Growth: Effects of CH3 Radicals and C2H2 Molecules at Low-Temperatures CVD
by: Barsukov, Yuri, et al.
Published: (2024)

Effect of Tensile Strain in GaN Layer on the Band Offsets and 2DEG Density in AlGaN/GaN Heterostructures
by: Date, Mihir, et al.
Published: (2017)

Quantum oscillations of holes in GaN
by: Chang, Chuan F. C., et al.
Published: (2025)

Comparison of reverse current mechanisms in GaN Schottky diodes grown on sapphire versus ammonothermal GaN substrates
by: Orfao, B., et al.
Published: (2026)

Effect of current on terahertz plasmons in AlGaN/GaN heterostructures
by: Dub, M., et al.
Published: (2025)

Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates
by: Cao, Can, et al.
Published: (2026)

Simplified EPFL GaN HEMT Model
by: Jazaeri, Farzan, et al.
Published: (2024)

Shubnikov-de Haas oscillations of two-dimensional electron gases in AlYN/GaN and AlScN/GaN heterostructures
by: Chen, Yu-Hsin, et al.
Published: (2026)

InGaN Nanopixel Arrays on Single Crystal GaN Substrate
by: Anand, Nirmal, et al.
Published: (2025)

Vertical GaN p–n Diodes with Ultralow Bevel Angle Mesa Termination Fabricated Using Photoresist Reflow and Single Cl 2 /BCl 3 /SF 6 Etching Step
by: Jarosław Tarenko, et al.
Published: (2025)

A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)
by: Fernández-Garrido, S., et al.
Published: (2024)

In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001)GaN
by: Koblmüller, G., et al.
Published: (2024)

Mechanism of overscreening breakdown by electrode surface morphology in asymmetric ionic liquids
by: Nesterova, Irina, et al.
Published: (2024)

Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates
by: Matys, Maciej, et al.
Published: (2024)

Microwave dependent quantum transport characteristics in GaN/AlGaN FETs
by: Shinozaki, Motoya, et al.
Published: (2024)

3 kV Monolithic Bidirectional GaN HEMT on Sapphire
by: Alam, Md Tahmidul, et al.
Published: (2024)

Frequency multiplication in Terahertz band using AlGaN/GaN plasmonic crystals
by: Shur, Michael, et al.
Published: (2025)

Controlling GaN nucleation via O$_2$-plasma-perforated graphene masks on c-plane sapphire
by: An, Su Young, et al.
Published: (2025)

Low Resistivity n‐type GaN Ohmic Contacts on GaN Substrates
by: Adamantia Logotheti, et al.
Published: (2024)

Discovery of Slot Plasma Excitations in a AlGaN/GaN Plasmonic Crystal
by: Khisameeva, A. R., et al.
Published: (2025)

Symmetry Adapted Analysis of Screw Dislocation: Electronic Structure and Carrier Recombination Mechanisms in GaN
by: Xie, Yuncheng, et al.
Published: (2026)

Non-hermitian Green's function theory with $N$-body interactions: the coupled-cluster similarity transformation
by: Coveney, Christopher J. N., et al.
Published: (2025)

Comparative Analysis of Ni/Ag and Ni/Au Contacts on GaN/AlGaN/GaN Platform
by: Yuanlei Zhang, et al.
Published: (2024)

Visualizing metal-mediated nucleation and growth of GaN
by: Liu, Abby, et al.
Published: (2025)

Spin-cavity interactions in relativistic Jahn-Teller systems under strong light-matter coupling
by: Fischer, Eric W., et al.
Published: (2026)

Constraints on exotic interactions from scalar spin-spin coupling in tritium deuteride (DT)
by: Cong, Lei, et al.
Published: (2024)

On the Origin of Carrier Loss in Mg-Doped N-Polar GaN
by: Kamiyama, Masahiro, et al.
Published: (2025)

Impact of Parasitic Conductive Interfaces on the DC and RF Performance of GaN‐on‐GaN HEMTs
by: Amer Bassal, et al.
Published: (2025)

Vertical GaN Trench‐MOSFETs Fabricated on Ammonothermally Grown Bulk GaN Substrates
by: Maciej Kamiński, et al.
Published: (2024)

Quantum-enhanced photocell based on GaN quantum dots
by: Dev, Aditya, et al.
Published: (2020)

Frequency-Resolved Forward Capacitance in GaN-based LEDs
by: Li, Yuchen, et al.
Published: (2024)

Polarity-induced selective area epitaxy of GaN nanowires
by: Schiaber, Ziani de Souza, et al.
Published: (2024)

Photoluminescent registration of fullerite C$_{60}$ derivatives during chemical interaction with H$_{2}$ and N$_{2}$ molecules
by: Zoryansky, Victor, et al.
Published: (2026)

Potential of Graphene/AlGaN/GaN heterostructures to study the drag and two-stream instability effects
by: Rehman, A., et al.
Published: (2026)