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Main Authors: Fernandez, Harol Moreno, Amirabbasi, Mohammad, Mempin, Crizaldo Jr., Trapletti, Andrea, Wartner, Garlef, Tesh, Marc F., Adabifiroozjaei, Esmaeil, Kathyola, Thokozile A., Castellano, Carlo, Luna, Leopoldo Molina, Hofmann, Jan P.
Format: Preprint
Published: 2025
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Online Access:https://arxiv.org/abs/2512.12712
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author Fernandez, Harol Moreno
Amirabbasi, Mohammad
Mempin, Crizaldo Jr.
Trapletti, Andrea
Wartner, Garlef
Tesh, Marc F.
Adabifiroozjaei, Esmaeil
Kathyola, Thokozile A.
Castellano, Carlo
Luna, Leopoldo Molina
Hofmann, Jan P.
author_facet Fernandez, Harol Moreno
Amirabbasi, Mohammad
Mempin, Crizaldo Jr.
Trapletti, Andrea
Wartner, Garlef
Tesh, Marc F.
Adabifiroozjaei, Esmaeil
Kathyola, Thokozile A.
Castellano, Carlo
Luna, Leopoldo Molina
Hofmann, Jan P.
contents Controlling lattice oxygen reactivity in earth abundant OER catalysts requires precise tuning of defect chemistry in the oxide lattice. Here, we combine DFT+U calculations with plasma assisted synthesis to show how O2 and H2O in the discharge govern vacancy formation, electronic structure, and catalytic predisposition in NiO thin films. Oxygen rich plasmas generate isolated and clustered Ni vacancies that stabilize oxygen ligand hole states and produce shallow O 2p Ni 3d hybrid levels, enhancing Ni O covalency. In contrast, introducing H2O during growth drives local hydroxylation that compensates vacancy induced Ni3+ centers, restoring Ni2+ like coordination, suppressing deep divacancy derived in gap states, and introducing shallow Ni O H derived valence-band tails. EXAFS confirms that hydroxylation perturbs only the local environment while preserving the medium-range NiO lattice, and Ni L-edge spectroscopy shows a persistent but redistributed ligand-hole population. These complementary vacancy and hydroxylation driven pathways provide a plasma controlled route to pre define electronic defect landscapes in NiO and to tune its activation toward OER relevant NiOOH formation.
format Preprint
id arxiv_https___arxiv_org_abs_2512_12712
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Plasma engineered Hydroxyl Defects in NiO a DFTSupported-Spectroscopic Analysis of Oxygen Hole States and Implications for Water Oxidation
Fernandez, Harol Moreno
Amirabbasi, Mohammad
Mempin, Crizaldo Jr.
Trapletti, Andrea
Wartner, Garlef
Tesh, Marc F.
Adabifiroozjaei, Esmaeil
Kathyola, Thokozile A.
Castellano, Carlo
Luna, Leopoldo Molina
Hofmann, Jan P.
Materials Science
Applied Physics
Controlling lattice oxygen reactivity in earth abundant OER catalysts requires precise tuning of defect chemistry in the oxide lattice. Here, we combine DFT+U calculations with plasma assisted synthesis to show how O2 and H2O in the discharge govern vacancy formation, electronic structure, and catalytic predisposition in NiO thin films. Oxygen rich plasmas generate isolated and clustered Ni vacancies that stabilize oxygen ligand hole states and produce shallow O 2p Ni 3d hybrid levels, enhancing Ni O covalency. In contrast, introducing H2O during growth drives local hydroxylation that compensates vacancy induced Ni3+ centers, restoring Ni2+ like coordination, suppressing deep divacancy derived in gap states, and introducing shallow Ni O H derived valence-band tails. EXAFS confirms that hydroxylation perturbs only the local environment while preserving the medium-range NiO lattice, and Ni L-edge spectroscopy shows a persistent but redistributed ligand-hole population. These complementary vacancy and hydroxylation driven pathways provide a plasma controlled route to pre define electronic defect landscapes in NiO and to tune its activation toward OER relevant NiOOH formation.
title Plasma engineered Hydroxyl Defects in NiO a DFTSupported-Spectroscopic Analysis of Oxygen Hole States and Implications for Water Oxidation
topic Materials Science
Applied Physics
url https://arxiv.org/abs/2512.12712