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| Main Authors: | , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2512.12943 |
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| _version_ | 1866915675316944896 |
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| author | Guo, Changqing Yang, Letao Wang, Jing Huang, Houbing |
| author_facet | Guo, Changqing Yang, Letao Wang, Jing Huang, Houbing |
| contents | Flexible ferroelectrics possess significant potential for wearable electronics and bio-inspired devices, yet their electromechanical coupling mechanisms under dynamic bending remain elusive. This study employs phase-field simulations to investigate the effects of bending deformation on domain structures and macroscopic ferroelectric responses in (SrTiO3)10/(PbTiO3)10/(SrTiO3)10 trilayer films. By constructing computational models for upward-concave (U-shaped) and downward-concave (N-shaped) configurations, we analyze the regulation of polarization patterns by strain distributions under varying curvature radii. The results demonstrate that the two bending modes generate opposite through-thickness strain gradients: U-shaped bending produces compressive strain in the upper layer and tensile strain in the lower, while N-shaped bending yields the reverse. These inhomogeneous strains drive distinct polarization reconfigurations within the PTO layer. While stable vortex-antivortex pairs persist at moderate curvatures, reducing the bending radius triggers divergent topological transitions -- U-shaped bending transforms vortex pairs into zigzag-like domains, whereas N-shaped bending promotes out-of-plane c-domain evolution. Crucially, bending-induced strain gradients generate transverse flexoelectric fields that markedly modulate hysteresis loops. U-shaped bending introduces a negative flexoelectric field, shifting loops rightward and suppressing maximum polarization Pmax. In contrast, N-shaped bending generates a positive field, shifting loops leftward and enhancing Pmax. Furthermore, analysis of polarization switching reveals that bending mediates domain-evolution pathways and reversal dynamics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_12943 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Phase-field simulation of domain switching in ferroelectric trilayer films under bending-induced strain gradient Guo, Changqing Yang, Letao Wang, Jing Huang, Houbing Materials Science Flexible ferroelectrics possess significant potential for wearable electronics and bio-inspired devices, yet their electromechanical coupling mechanisms under dynamic bending remain elusive. This study employs phase-field simulations to investigate the effects of bending deformation on domain structures and macroscopic ferroelectric responses in (SrTiO3)10/(PbTiO3)10/(SrTiO3)10 trilayer films. By constructing computational models for upward-concave (U-shaped) and downward-concave (N-shaped) configurations, we analyze the regulation of polarization patterns by strain distributions under varying curvature radii. The results demonstrate that the two bending modes generate opposite through-thickness strain gradients: U-shaped bending produces compressive strain in the upper layer and tensile strain in the lower, while N-shaped bending yields the reverse. These inhomogeneous strains drive distinct polarization reconfigurations within the PTO layer. While stable vortex-antivortex pairs persist at moderate curvatures, reducing the bending radius triggers divergent topological transitions -- U-shaped bending transforms vortex pairs into zigzag-like domains, whereas N-shaped bending promotes out-of-plane c-domain evolution. Crucially, bending-induced strain gradients generate transverse flexoelectric fields that markedly modulate hysteresis loops. U-shaped bending introduces a negative flexoelectric field, shifting loops rightward and suppressing maximum polarization Pmax. In contrast, N-shaped bending generates a positive field, shifting loops leftward and enhancing Pmax. Furthermore, analysis of polarization switching reveals that bending mediates domain-evolution pathways and reversal dynamics. |
| title | Phase-field simulation of domain switching in ferroelectric trilayer films under bending-induced strain gradient |
| topic | Materials Science |
| url | https://arxiv.org/abs/2512.12943 |