_version_ 1866914379227725824
author Rinella, Gianluca Aglieri
Aglietta, Luca
Antonelli, Matias
Barile, Francesco
Benotto, Franco
Beole, Stefania Maria
Botta, Elena
Bruno, Giuseppe Eugenio
Colella, Domenico
Colelli, Angelo
Contin, Giacomo
De Robertis, Giuseppe
Dumitrache, Floarea
Elia, Domenico
Ferrero, Chiara
Fransen, Martin
Grelli, Alessandro
Hillemanns, Hartmut
Hobus, Isis
Kluge, Alex
Kumar, Shyam
Lemoine, Corentin
Licciulli, Francesco
Lim, Bong-Hwi
Loddo, Flavio
Bilo, Esther Mwetaminwa M
Mager, Magnus
Marras, Davide
Martinengo, Paolo
Pastore, Cosimo
Patra, Rajendra Nath
Perciballi, Stefania
Piro, Francesco
Prino, Francesco
Ramello, Luciano
Reidt, Felix
Russo, Roberto
Sarritzu, Valerio
Savino, Umberto
Senyukov, Serhiy
Sitta, Mario
Snoeys, Walter
Sonneveld, Jory
Suljic, Miljenko
Triloki, Triloki
Usai, Gianluca
Wennlof, Haakan
author_facet Rinella, Gianluca Aglieri
Aglietta, Luca
Antonelli, Matias
Barile, Francesco
Benotto, Franco
Beole, Stefania Maria
Botta, Elena
Bruno, Giuseppe Eugenio
Colella, Domenico
Colelli, Angelo
Contin, Giacomo
De Robertis, Giuseppe
Dumitrache, Floarea
Elia, Domenico
Ferrero, Chiara
Fransen, Martin
Grelli, Alessandro
Hillemanns, Hartmut
Hobus, Isis
Kluge, Alex
Kumar, Shyam
Lemoine, Corentin
Licciulli, Francesco
Lim, Bong-Hwi
Loddo, Flavio
Bilo, Esther Mwetaminwa M
Mager, Magnus
Marras, Davide
Martinengo, Paolo
Pastore, Cosimo
Patra, Rajendra Nath
Perciballi, Stefania
Piro, Francesco
Prino, Francesco
Ramello, Luciano
Reidt, Felix
Russo, Roberto
Sarritzu, Valerio
Savino, Umberto
Senyukov, Serhiy
Sitta, Mario
Snoeys, Walter
Sonneveld, Jory
Suljic, Miljenko
Triloki, Triloki
Usai, Gianluca
Wennlof, Haakan
contents Monolithic Active Pixel Sensors (MAPS) in advanced CMOS imaging technologies are key to next-generation tracking systems for high-energy physics, where radiation hardness and precise vertex reconstruction are essential. As part of the ALICE ITS3 R&D program in synergy with the CERN R&D, we evaluated the performance of the Analog Pixel Test Structures (APTS) fabricated in the TPSCo 65 nm CMOS imaging process. The prototypes employ 10 um pitch pixels with a fast operational amplifier-based buffering stage at the output, enabling direct characterization of intrinsic sensor response. Beam tests with minimum ionizing particles assessed the timing and charge collection of DC- and AC-coupled designs, including devices exposed to 10^14 NIEL and 10^15 NIEL non ioninsing energy loss. DC-coupled sensors demonstrated stable performance, maintaining time resolution lower than 70 ps and >99% detection efficiency up to 10^15 NIEL. AC-coupled sensors demonstrated a wide operational margin, with efficiencies above 99% for clusterization thresholds below 150 electrons. Even though the AC coupling allows higher reverse bias than DC-coupled sensors, the reduced signal amplitude lowers the signal-to-noise ratio, increasing the jitter contribution. At high reverse bias, the AC-coupled sensors achieve time resolutions comparable to the DC-coupled version, demonstrating the viability of both approaches. These results also suggest that combining the low capacitance of DC-coupled designs with the high-bias capability of AC coupling could further enhance time resolution. These results confirm the suitability of 65 nm MAPS for future collider detectors requiring high radiation tolerance, efficiency, and timing precision.
format Preprint
id arxiv_https___arxiv_org_abs_2512_13339
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Influence of Radiation and AC Coupling on Time Performance of Analog Pixels Test Structures in 65 nm CMOS technology
Rinella, Gianluca Aglieri
Aglietta, Luca
Antonelli, Matias
Barile, Francesco
Benotto, Franco
Beole, Stefania Maria
Botta, Elena
Bruno, Giuseppe Eugenio
Colella, Domenico
Colelli, Angelo
Contin, Giacomo
De Robertis, Giuseppe
Dumitrache, Floarea
Elia, Domenico
Ferrero, Chiara
Fransen, Martin
Grelli, Alessandro
Hillemanns, Hartmut
Hobus, Isis
Kluge, Alex
Kumar, Shyam
Lemoine, Corentin
Licciulli, Francesco
Lim, Bong-Hwi
Loddo, Flavio
Bilo, Esther Mwetaminwa M
Mager, Magnus
Marras, Davide
Martinengo, Paolo
Pastore, Cosimo
Patra, Rajendra Nath
Perciballi, Stefania
Piro, Francesco
Prino, Francesco
Ramello, Luciano
Reidt, Felix
Russo, Roberto
Sarritzu, Valerio
Savino, Umberto
Senyukov, Serhiy
Sitta, Mario
Snoeys, Walter
Sonneveld, Jory
Suljic, Miljenko
Triloki, Triloki
Usai, Gianluca
Wennlof, Haakan
Instrumentation and Detectors
Applied Physics
Monolithic Active Pixel Sensors (MAPS) in advanced CMOS imaging technologies are key to next-generation tracking systems for high-energy physics, where radiation hardness and precise vertex reconstruction are essential. As part of the ALICE ITS3 R&D program in synergy with the CERN R&D, we evaluated the performance of the Analog Pixel Test Structures (APTS) fabricated in the TPSCo 65 nm CMOS imaging process. The prototypes employ 10 um pitch pixels with a fast operational amplifier-based buffering stage at the output, enabling direct characterization of intrinsic sensor response. Beam tests with minimum ionizing particles assessed the timing and charge collection of DC- and AC-coupled designs, including devices exposed to 10^14 NIEL and 10^15 NIEL non ioninsing energy loss. DC-coupled sensors demonstrated stable performance, maintaining time resolution lower than 70 ps and >99% detection efficiency up to 10^15 NIEL. AC-coupled sensors demonstrated a wide operational margin, with efficiencies above 99% for clusterization thresholds below 150 electrons. Even though the AC coupling allows higher reverse bias than DC-coupled sensors, the reduced signal amplitude lowers the signal-to-noise ratio, increasing the jitter contribution. At high reverse bias, the AC-coupled sensors achieve time resolutions comparable to the DC-coupled version, demonstrating the viability of both approaches. These results also suggest that combining the low capacitance of DC-coupled designs with the high-bias capability of AC coupling could further enhance time resolution. These results confirm the suitability of 65 nm MAPS for future collider detectors requiring high radiation tolerance, efficiency, and timing precision.
title Influence of Radiation and AC Coupling on Time Performance of Analog Pixels Test Structures in 65 nm CMOS technology
topic Instrumentation and Detectors
Applied Physics
url https://arxiv.org/abs/2512.13339