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| Format: | Preprint |
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2025
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| Online Access: | https://arxiv.org/abs/2512.13983 |
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| _version_ | 1866918249711534080 |
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| author | Jangir, Vikash Mazumder, Sourojit K. Mazumder, Sudip K. |
| author_facet | Jangir, Vikash Mazumder, Sourojit K. Mazumder, Sudip K. |
| contents | We present an investigation into the role of anode grid pitch and excitation spectrum on the performance of high-power optoelectronic switches utilizing Fe-doped $β$-Ga$_2$O$3$. By systematically varying the anode grid pitch ($20-80\ μ\text{m}$) and the excitation spectrum ($235-500\ \text{nm}$), we identify a crucial sub-bandgap regime, centered at $272\ \text{nm}$, that effectively activates deep-level defect states. This activation is shown to enable highly efficient bulk carrier transport, a significant contrast to conventional above-bandgap excitation which is hampered by shallow surface absorption. The sub-bandgap illumination promotes strong photocurrent generation and substantially improved carrier collection efficiency. Under optimized conditions, specifically utilizing a $40\ μ\text{m}$ anode pitch, the fabricated device achieves a high peak photocurrent of $4.14\ \text{A}$ and a record-low on-resistance of $10.4\ Ω$. To quantify this simultaneous high-performance achievement, we introduce a responsivity-conductance figure of merit ($\text{FoM}{_{RC}}$), which attains a record value of $4.7 \times 10^{-6}\ \text{S/W}$. These findings robustly demonstrate the superior suitability of Fe-doped $β$-Ga$_2$O$_3$ for next-generation high-power optoelectronic switching applications, enabling reliable ampere-level photocurrents coupled with minimized on-resistance through strategic device geometry optimization and sub-bandgap excitation. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_13983 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Record Responsivity-conductance Performance in Sub-bandgap-triggered Ga2O3 PCSS Jangir, Vikash Mazumder, Sourojit K. Mazumder, Sudip K. Applied Physics We present an investigation into the role of anode grid pitch and excitation spectrum on the performance of high-power optoelectronic switches utilizing Fe-doped $β$-Ga$_2$O$3$. By systematically varying the anode grid pitch ($20-80\ μ\text{m}$) and the excitation spectrum ($235-500\ \text{nm}$), we identify a crucial sub-bandgap regime, centered at $272\ \text{nm}$, that effectively activates deep-level defect states. This activation is shown to enable highly efficient bulk carrier transport, a significant contrast to conventional above-bandgap excitation which is hampered by shallow surface absorption. The sub-bandgap illumination promotes strong photocurrent generation and substantially improved carrier collection efficiency. Under optimized conditions, specifically utilizing a $40\ μ\text{m}$ anode pitch, the fabricated device achieves a high peak photocurrent of $4.14\ \text{A}$ and a record-low on-resistance of $10.4\ Ω$. To quantify this simultaneous high-performance achievement, we introduce a responsivity-conductance figure of merit ($\text{FoM}{_{RC}}$), which attains a record value of $4.7 \times 10^{-6}\ \text{S/W}$. These findings robustly demonstrate the superior suitability of Fe-doped $β$-Ga$_2$O$_3$ for next-generation high-power optoelectronic switching applications, enabling reliable ampere-level photocurrents coupled with minimized on-resistance through strategic device geometry optimization and sub-bandgap excitation. |
| title | Record Responsivity-conductance Performance in Sub-bandgap-triggered Ga2O3 PCSS |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2512.13983 |