Electrically tunable spin qubits in strain-engineered graphene p-n junctions

Fuente: arXiv
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Autori principali: Jung, Myung-Chul, Myoung, Nojoon
Natura: Preprint
Pubblicazione: 2025
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author Jung, Myung-Chul
Myoung, Nojoon
author_facet Jung, Myung-Chul
Myoung, Nojoon
contents Strain engineering enables quantum confinement in pristine graphene without degrading its intrinsic mobility and spin coherence. Here, we extend previously proposed strain-induced charge-qubit architectures by incorporating spin degrees of freedom through Rashba spin-orbit coupling (RSOC) and Zeeman fields, enabling spin-qubit operation in single-layer graphene (SLG). In a graphene p-n junction, a strain-induced nanobubble generates a pseudo-magnetic field that forms double quantum dots with gate-tunable level hybridization. Tight-binding quantum transport simulations and a four-band model reveal two distinct avoided crossings: spin-conserving gaps at zero detuning and spin-flip gaps at finite detuning, the latter increasing with SOC strength while the former decreases. Time-domain simulations confirm detuning-dependent Rabi oscillations corresponding to these two operational regimes. These results demonstrate that strain-induced confinement combined with tunable SOC provides a viable mechanism for coherent spin manipulation in pristine graphene, positioning strained SLG as a promising platform for scalable spin-based quantum technologies.
format Preprint
id arxiv_https___arxiv_org_abs_2512_14508
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Electrically tunable spin qubits in strain-engineered graphene p-n junctions
Jung, Myung-Chul
Myoung, Nojoon
Mesoscale and Nanoscale Physics
Materials Science
Computational Physics
Strain engineering enables quantum confinement in pristine graphene without degrading its intrinsic mobility and spin coherence. Here, we extend previously proposed strain-induced charge-qubit architectures by incorporating spin degrees of freedom through Rashba spin-orbit coupling (RSOC) and Zeeman fields, enabling spin-qubit operation in single-layer graphene (SLG). In a graphene p-n junction, a strain-induced nanobubble generates a pseudo-magnetic field that forms double quantum dots with gate-tunable level hybridization. Tight-binding quantum transport simulations and a four-band model reveal two distinct avoided crossings: spin-conserving gaps at zero detuning and spin-flip gaps at finite detuning, the latter increasing with SOC strength while the former decreases. Time-domain simulations confirm detuning-dependent Rabi oscillations corresponding to these two operational regimes. These results demonstrate that strain-induced confinement combined with tunable SOC provides a viable mechanism for coherent spin manipulation in pristine graphene, positioning strained SLG as a promising platform for scalable spin-based quantum technologies.
title Electrically tunable spin qubits in strain-engineered graphene p-n junctions
topic Mesoscale and Nanoscale Physics
Materials Science
Computational Physics
url https://arxiv.org/abs/2512.14508