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| Main Authors: | , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2512.15005 |
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| _version_ | 1866915875059138560 |
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| author | Klein, Amelia R. Austin, Hayley J. Murakami, Fumikazu Ford, Jamie Tatebayashi, Jun Tonouchi, Masayoshi Fujiwara, Yasufumi Dierolf, Volkmar Bassett, Lee C. Mitchell, Brandon |
| author_facet | Klein, Amelia R. Austin, Hayley J. Murakami, Fumikazu Ford, Jamie Tatebayashi, Jun Tonouchi, Masayoshi Fujiwara, Yasufumi Dierolf, Volkmar Bassett, Lee C. Mitchell, Brandon |
| contents | Europium-doped gallium nitride (GaN:Eu) is a promising platform for classical and quantum optoelectronic applications. When grown using organometallic vapor-phase epitaxy, the dominant red emission from Eu exhibits an inhomogeneous photoluminescence (PL) spectrum due to contributions from several non-equivalent incorporation sites that can be distinguished with combined excitation emission spectroscopy. Energy transfer from the GaN bandgap to the majority site is inefficient, limiting the performance of GaN:Eu LEDs and resulting in an inhomogeneous emission spectrum dominated by disproportionate contributions from minority sites. In this work, we use site-selective spectroscopy to characterize the photoluminescence properties of delta-doped structures with alternating doped and undoped layers of varying thicknesses and demonstrate that they selectively enhance emission from the majority site when compared to uniformly-doped samples. Samples with 2-nm and 10-nm doped layers show much greater PL intensity per Eu concentration as well as more efficient energy transfer to the majority site, which are both highly desirable for creating power-efficient LEDs. Meanwhile, a sample with 1-nm doped layers shows emission only from the majority site, resulting in a narrow, homogeneous emission spectrum that is desirable for quantum technologies. This utilization of delta-doping has the potential to be broadly applicable for engineering desirable defect properties in rare-earth doped semiconductors. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_15005 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Site-selective enhancement of Eu emission in delta-doped GaN Klein, Amelia R. Austin, Hayley J. Murakami, Fumikazu Ford, Jamie Tatebayashi, Jun Tonouchi, Masayoshi Fujiwara, Yasufumi Dierolf, Volkmar Bassett, Lee C. Mitchell, Brandon Materials Science Optics Europium-doped gallium nitride (GaN:Eu) is a promising platform for classical and quantum optoelectronic applications. When grown using organometallic vapor-phase epitaxy, the dominant red emission from Eu exhibits an inhomogeneous photoluminescence (PL) spectrum due to contributions from several non-equivalent incorporation sites that can be distinguished with combined excitation emission spectroscopy. Energy transfer from the GaN bandgap to the majority site is inefficient, limiting the performance of GaN:Eu LEDs and resulting in an inhomogeneous emission spectrum dominated by disproportionate contributions from minority sites. In this work, we use site-selective spectroscopy to characterize the photoluminescence properties of delta-doped structures with alternating doped and undoped layers of varying thicknesses and demonstrate that they selectively enhance emission from the majority site when compared to uniformly-doped samples. Samples with 2-nm and 10-nm doped layers show much greater PL intensity per Eu concentration as well as more efficient energy transfer to the majority site, which are both highly desirable for creating power-efficient LEDs. Meanwhile, a sample with 1-nm doped layers shows emission only from the majority site, resulting in a narrow, homogeneous emission spectrum that is desirable for quantum technologies. This utilization of delta-doping has the potential to be broadly applicable for engineering desirable defect properties in rare-earth doped semiconductors. |
| title | Site-selective enhancement of Eu emission in delta-doped GaN |
| topic | Materials Science Optics |
| url | https://arxiv.org/abs/2512.15005 |