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| Main Authors: | , , , , , , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2512.15518 |
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| _version_ | 1866911475201736704 |
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| author | Bian, Ce Zhao, Yifan Guzman, Roger Liu, Hongtao Hu, Hao Qi, Qi Zhu, Ke Wang, Hao Wu, Kang Guo, Hui He, Wanzhen Wang, Zhaoqing Peng, Peng Xu, Zhiping Zhou, Wu Ding, Feng Yang, Haitao Gao, Hong-Jun |
| author_facet | Bian, Ce Zhao, Yifan Guzman, Roger Liu, Hongtao Hu, Hao Qi, Qi Zhu, Ke Wang, Hao Wu, Kang Guo, Hui He, Wanzhen Wang, Zhaoqing Peng, Peng Xu, Zhiping Zhou, Wu Ding, Feng Yang, Haitao Gao, Hong-Jun |
| contents | Two-dimensional (2D) materials, such as graphene, transition metal dichalcogenides (TMDs), and hBN, exhibit intriguing properties that are sensitive to their atomic-scale structures and can be further enriched through van der Waals (vdW) integration. However, the precise synthesis and clean integration of 2D materials remain challenging. Here, using graphene or hBN as a vdW capping layer, we create a nano-confined environment that directs the growth kinetics of 2D TMDs (e.g., NbSe2 and MoS2), enabling precise formation of TMD monolayers with tailored morphologies, from isolated monolayer domains to large-scale continuous films and intrinsically-patterned rings. Moreover, Janus S-Mo-Se monolayers are synthesized with atomic precision via vdW-protected bottom-plane chalcogen substitution. Importantly, our approach simultaneously produces ultraclean vdW interfaces. This in situ encapsulation reliably preserves air-sensitive materials, as evidenced by the enhanced superconductivity of nano-confined NbSe2 monolayers. Altogether, our study establishes a versatile platform for the controlled synthesis and integration of 2D TMDs for advanced applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_15518 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Atomically-precise synthesis and simultaneous integration of 2D transition metal dichalcogenides enabled by nano-confinement Bian, Ce Zhao, Yifan Guzman, Roger Liu, Hongtao Hu, Hao Qi, Qi Zhu, Ke Wang, Hao Wu, Kang Guo, Hui He, Wanzhen Wang, Zhaoqing Peng, Peng Xu, Zhiping Zhou, Wu Ding, Feng Yang, Haitao Gao, Hong-Jun Materials Science Two-dimensional (2D) materials, such as graphene, transition metal dichalcogenides (TMDs), and hBN, exhibit intriguing properties that are sensitive to their atomic-scale structures and can be further enriched through van der Waals (vdW) integration. However, the precise synthesis and clean integration of 2D materials remain challenging. Here, using graphene or hBN as a vdW capping layer, we create a nano-confined environment that directs the growth kinetics of 2D TMDs (e.g., NbSe2 and MoS2), enabling precise formation of TMD monolayers with tailored morphologies, from isolated monolayer domains to large-scale continuous films and intrinsically-patterned rings. Moreover, Janus S-Mo-Se monolayers are synthesized with atomic precision via vdW-protected bottom-plane chalcogen substitution. Importantly, our approach simultaneously produces ultraclean vdW interfaces. This in situ encapsulation reliably preserves air-sensitive materials, as evidenced by the enhanced superconductivity of nano-confined NbSe2 monolayers. Altogether, our study establishes a versatile platform for the controlled synthesis and integration of 2D TMDs for advanced applications. |
| title | Atomically-precise synthesis and simultaneous integration of 2D transition metal dichalcogenides enabled by nano-confinement |
| topic | Materials Science |
| url | https://arxiv.org/abs/2512.15518 |