Salvato in:
| Autori principali: | , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2025
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| Soggetti: | |
| Accesso online: | https://arxiv.org/abs/2512.15565 |
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Sommario:
- We fabricate (In,Ga)N pseudo-substrates with a total thickness of ~1 um grown on GaN templates using plasma-assisted molecular beam epitaxy. In a three-step process, we change growth conditions from N-rich to metal-rich in order to sequentially form a roughened GaN layer, relaxed (In,Ga)N nanostructures, and a coalesced, smooth (In,Ga)N layer. Samples are analyzed by scanning electron and atomic force microscopy, X-ray diffraction, as well as photo- and cathodoluminescence spectroscopy. Compared to a reference layer grown directly on GaN, the pseudo-substrate exhibits a higher In content (~0.3), strain relaxation degree (~80%), narrower photoluminescence linewidth, and larger area fraction of bright regions in cathodoluminescence maps, showing the benefits of the three-step growth protocol. This straightforward approach does not necessitate any ex-situ processing and could enable the scalable fabrication of (In,Ga)N pseudo-substrates for high-efficiency red-emitting (In,Ga)N devices.