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Pulse-Mode Operation and Reliability of BEOL-Compatible Ferroelectric Non-Volatile Capacitive Memories with Amorphous Oxide Semiconductor Channels

Fuente: arXiv

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Détails bibliographiques
Auteurs principaux:	Lee, Junmo, Zhang, Chengyang, Kim, Tae-Hyeon, Datta, Suman, Yu, Shimeng
Format:	Preprint
Publié:	2025
Sujets:	Materials Science Other Condensed Matter Applied Physics
Accès en ligne:	Acceder al recurso
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

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