Cover Image

In situ XRD Study of Strain Evolution in AlGaN/GaN HEMT at High Temperatures up to 1000 °C

Fuente: arXiv

Saved in:

Bibliographic Details
Main Authors:	Li, Botong, Duersch, Bobby G., Ellis, Hunter, Rahaman, Imteaz, Belanger, Aidan, Aksamija, Zlatan, Van Devener, Brian Roy, Anderson, Kathy, Fu, Kai
Format:	Preprint
Published:	2025
Subjects:	Materials Science
Online Access:	Acceder al recurso
Tags:	Add Tag No Tags, Be the first to tag this record!

Similar Items

Crystallinity Evolution of MOCVD-Grown $β$-Ga$_2$O$_3$ Films Probed by In Situ HT-XRD under Different Reactor Heights
by: Rahaman, Imteaz, et al.
Published: (2026)

Phase Evolution and Substrate-Dependent Nucleation of Quartz GeO$_2$ Films Grown by MOCVD on r- and c-Plane Sapphires
by: Li, Botong, et al.
Published: (2025)

Seed-Driven Stepwise Crystallization (SDSC) for Growing Rutile GeO2 Films via MOCVD
by: Rahaman, Imteaz, et al.
Published: (2024)

In situ Study of p-NiO Film Quality at High Temperatures up to 1100 deg C
by: Ellis, Hunter, et al.
Published: (2025)

Retracted: Improvement and Reduction of Self-Heating Effect in AlGaN/GaN HEMT Devices
by: Journal of Sensors
Published: (2024)

Inverse Design of AlGaN/GaN HEMT RF Device with Source Connected Field Plate
by: Aurick Das, et al.
Published: (2025)

Optimization of gate structure towards high‐sensitivity AlGaN/GaN HEMT cortisol detection
by: Hui Chang, et al.
Published: (2024)

Enhanced Breakdown and RF Performance in Field-Plated AlGaN/GaN HEMT for High-Power Applications
by: Rahman, Tanjim, et al.
Published: (2025)

In Situ Study of p‐NiO Film Quality at High Temperatures up to 1100°C
by: Hunter Ellis, et al.
Published: (2026)

Optimizing electrical and thermal performance in AlGaN/GaN HEMT devices using dual‐metal gate technology
by: Preethi Elizabeth Iype, et al.
Published: (2024)

Effect of Tensile Strain in GaN Layer on the Band Offsets and 2DEG Density in AlGaN/GaN Heterostructures
by: Date, Mihir, et al.
Published: (2017)

Numerical Investigation of Quasi‐Vertical GaN‐on‐Si MOSFET Incorporating AlGaN/GaN Polarization Interface and AlGaN Functional Layer
by: Zijun Lin, et al.
Published: (2026)

A New Method to Estimate Surface Donor Density (N TD ) in AlGaN/GaN HEMT by Validated DCT Simulations
by: Vaidehi Vijay Painter, et al.
Published: (2025)

Cathodoluminescence of quantized energy states at AlGaN/GaN interface
by: Chahshouri, Fatemeh, et al.
Published: (2024)

Effect of current on terahertz plasmons in AlGaN/GaN heterostructures
by: Dub, M., et al.
Published: (2025)

Schottky Contact Degradation and Dislocations in AlGaN‐GaN HEMTs
by: Yongkun Sin, et al.
Published: (2025)

Comparative Analysis of Ni/Ag and Ni/Au Contacts on GaN/AlGaN/GaN Platform
by: Yuanlei Zhang, et al.
Published: (2024)

Control of Extraordinary Optical Transmission in Resonant Terahertz Gratings via Lateral Depletion in an AlGaN-GaN Heterostructure
by: Nyabere, Geofrey, et al.
Published: (2025)

Crack-free high composition (>35%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT on sapphire with record low sheet resistance
by: Mukhopadhyay, Swarnav, et al.
Published: (2023)

$β$-Ga$_2$O$_3$--Based Radiation Detector for Proton Therapy
by: Ellis, Hunter D., et al.
Published: (2025)

Epitaxial Growth of Rutile GeO$_2$ via MOCVD
by: Rahaman, Imteaz, et al.
Published: (2024)

Effect of Ultra‐Thin AlGaN Regrown Layer on the Electrical Properties of ZrO2/AlGaN/GaN Structures
by: Toi Nezu, et al.
Published: (2024)

Microwave dependent quantum transport characteristics in GaN/AlGaN FETs
by: Shinozaki, Motoya, et al.
Published: (2024)

Simplified EPFL GaN HEMT Model
by: Jazaeri, Farzan, et al.
Published: (2024)

Versetzungen und inverse Pyramidendefekte in AlGaN/GaN-HEMT-Strukturen auf Si und deren Einfluss auf Material- und Bauelementeigenschaften
by: Besendörfer, Sven
Published: (2025)

Thermal Stability and Phase Transformation of Conductive $α$-$(\mathrm{Al}_{x}\mathrm{Ga}_{1-x})_{2}\mathrm{O}_{3}/\mathrm{Ga}_{2}\mathrm{O}_{3}$ Heterostructures on Sapphire Substrates
by: Li, Botong, et al.
Published: (2026)

Formation of Ultra-High-Resistance Au/Ti/p-GaN Junctions and the Applications in AlGaN/GaN HEMTs
by: Zhou, Guangnan, et al.
Published: (2021)

All Nitride NbN/AlGaN/GaN Schottky Gate HEMT on (0001) 4H‐SiC: Improved DC Performance and Metallic Passivation
by: Umang Singh, et al.
Published: (2026)

Impact of AlN buffer thickness on electrical and thermal characteristics of AlGaN/GaN/AlN HEMTs
by: Kim, Minho, et al.
Published: (2025)

Frequency multiplication in Terahertz band using AlGaN/GaN plasmonic crystals
by: Shur, Michael, et al.
Published: (2025)

Discovery of Slot Plasma Excitations in a AlGaN/GaN Plasmonic Crystal
by: Khisameeva, A. R., et al.
Published: (2025)

Record negative photoconductivity in N-polar AlGaN/GaN quantum-well heterostructures
by: Matys, Maciej, et al.
Published: (2025)

Record Negative Photoconductivity in N‐Polar AlGaN/GaN Quantum‐Well Heterostructures
by: Maciej Matys, et al.
Published: (2025)

Effects of the built-in electric field on free and bound excitons in a polar GaN/AlGaN/GaN based heterostructure
by: Méchin, Loïc, et al.
Published: (2025)

Carbon-Nanotube/$β$-Ga$_2$O$_3$ Heterojunction PIN Diodes
by: Ellis, Hunter D., et al.
Published: (2025)

Device and Noise Performances of AlGaN/GaN High Electron Mobility Transistors with Various GaN Channel Layers Grown on AlN Buffer Layer
by: Ki‐Sik Im, et al.
Published: (2024)

Microwave Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistor on Semi‐Insulating Mn‐Doped GaN Substrate
by: Tomoharu Sugino, et al.
Published: (2024)

Extreme Terahertz Nonlinearity of AlGaN/GaN-based Grating-Gate Plasmonic Crystals
by: Sai, Pavlo, et al.
Published: (2025)

Impact of Polarization Charges on Threshold Voltage and Band Offset in AlGaN/GaN Heterostructures
by: Tetsuya Suemitsu, et al.
Published: (2026)

Extreme Terahertz Nonlinearity of AlGaN/GaN‐Based Grating‐Gate Plasmonic Crystals
by: Pavlo Sai, et al.
Published: (2025)