High-Performance Near-Infrared Quantum Emission from Color Centers in hBN

Fuente: arXiv
Saved in:
Bibliographic Details
Main Authors: Doan, Sean, Patel, Sahil D., Chen, Yilin, Turiansky, Jordan A. Gusdorff. Mark E., Villagomez, Luis, Jevremovic, Luka, Lewis, Nicholas, Watanabe, Kenji, Taniguchi, Takashi, Bassett, Lee C., Van de Walle, Chris, Moody, Galan
Format: Preprint
Published: 2025
Subjects:
Online Access:
Tags: Add Tag
No Tags, Be the first to tag this record!
_version_ 1866913058122629120
author Doan, Sean
Patel, Sahil D.
Chen, Yilin
Turiansky, Jordan A. Gusdorff. Mark E.
Villagomez, Luis
Jevremovic, Luka
Lewis, Nicholas
Watanabe, Kenji
Taniguchi, Takashi
Bassett, Lee C.
Van de Walle, Chris
Moody, Galan
author_facet Doan, Sean
Patel, Sahil D.
Chen, Yilin
Turiansky, Jordan A. Gusdorff. Mark E.
Villagomez, Luis
Jevremovic, Luka
Lewis, Nicholas
Watanabe, Kenji
Taniguchi, Takashi
Bassett, Lee C.
Van de Walle, Chris
Moody, Galan
contents Color centers hosted in hexagonal boron nitride have emerged as a highly promising platform for single-photon emission and spin-photon technologies relevant to quantum communication and quantum networking. As a wide-bandgap van der Waals material, hBN can host optically active quantum defects across a broad spectral range. Here, we demonstrate a simple and scalable oxygen-plasma process that reproducibly creates single quantum emitters in hBN with blinking-free zero-phonon lines spanning the near-infrared from 700 up to 971 nm. These emitters combine MHz-level brightness, single-photon purity up to 99.9\%, and ultranarrow cryogenic linewidths down to 2.7~GHz under quasi-resonant excitation, placing them in a particularly attractive regime for quantum photonics. Photostability measurements further reveal resistance to photobleaching, sub-nm spectral stability over long timescales, and near-shot-noise-limited intensity fluctuations. Analysis of the phonon sidebands shows weak vibronic coupling and ZPL-dominated emission, with Debye--Waller factors approaching 50\%. Control experiments together with EDS elemental mapping support oxygen incorporation as a necessary ingredient in activating the NIR emitter population, while first-principles calculations identify O$_N$V$_N$ and O$_N$V$_N$H as the leading defect candidates. These results establish a high-performance NIR quantum-emitter platform in hBN for free-space quantum networking and future integrated quantum-photonic architectures.
format Preprint
id arxiv_https___arxiv_org_abs_2512_16197
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle High-Performance Near-Infrared Quantum Emission from Color Centers in hBN
Doan, Sean
Patel, Sahil D.
Chen, Yilin
Turiansky, Jordan A. Gusdorff. Mark E.
Villagomez, Luis
Jevremovic, Luka
Lewis, Nicholas
Watanabe, Kenji
Taniguchi, Takashi
Bassett, Lee C.
Van de Walle, Chris
Moody, Galan
Quantum Physics
Optics
Color centers hosted in hexagonal boron nitride have emerged as a highly promising platform for single-photon emission and spin-photon technologies relevant to quantum communication and quantum networking. As a wide-bandgap van der Waals material, hBN can host optically active quantum defects across a broad spectral range. Here, we demonstrate a simple and scalable oxygen-plasma process that reproducibly creates single quantum emitters in hBN with blinking-free zero-phonon lines spanning the near-infrared from 700 up to 971 nm. These emitters combine MHz-level brightness, single-photon purity up to 99.9\%, and ultranarrow cryogenic linewidths down to 2.7~GHz under quasi-resonant excitation, placing them in a particularly attractive regime for quantum photonics. Photostability measurements further reveal resistance to photobleaching, sub-nm spectral stability over long timescales, and near-shot-noise-limited intensity fluctuations. Analysis of the phonon sidebands shows weak vibronic coupling and ZPL-dominated emission, with Debye--Waller factors approaching 50\%. Control experiments together with EDS elemental mapping support oxygen incorporation as a necessary ingredient in activating the NIR emitter population, while first-principles calculations identify O$_N$V$_N$ and O$_N$V$_N$H as the leading defect candidates. These results establish a high-performance NIR quantum-emitter platform in hBN for free-space quantum networking and future integrated quantum-photonic architectures.
title High-Performance Near-Infrared Quantum Emission from Color Centers in hBN
topic Quantum Physics
Optics
url https://arxiv.org/abs/2512.16197