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| Main Authors: | , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2512.16579 |
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| _version_ | 1866914207439519744 |
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| author | Lee, Gyeongjun Borel, Antoine Taniguchi, Takashi Watanabe, Kenji Sirotti, Fausto Cadiz, Fabian |
| author_facet | Lee, Gyeongjun Borel, Antoine Taniguchi, Takashi Watanabe, Kenji Sirotti, Fausto Cadiz, Fabian |
| contents | Controlled activation of defect-bound excitonic states in two-dimensional semiconductors provides a route to isolated quantum emitters and a sensitive probe of defect physics. Here we demonstrate that \textit{in situ} high-temperature annealing of hBN-encapsulated monolayer WS$_2$ on a suspended microheater leads to the emergence of spectrally isolated single-photon emitters at cryogenic temperatures. Annealing at temperatures around 1100 K produces a sharp emission line, $X_L$, red-shifted by approximately 80 meV from the neutral exciton and exhibiting a linewidth below 200 $μ$eV. Photoluminescence excitation spectroscopy and power-dependent measurements show that $X_L$ originates from annealing-induced defects in the WS$_2$ monolayer, while second-order photon correlation measurements reveal clear antibunching with $g^{(2)}(0)<0.5$. These results establish high-temperature \textit{in situ} annealing as a controlled means to access defect-bound excitonic states and single-photon emission in van der Waals materials. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_16579 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | High-Temperature Activation of Single-Photon Emitters in monolayer WS2 Lee, Gyeongjun Borel, Antoine Taniguchi, Takashi Watanabe, Kenji Sirotti, Fausto Cadiz, Fabian Materials Science Controlled activation of defect-bound excitonic states in two-dimensional semiconductors provides a route to isolated quantum emitters and a sensitive probe of defect physics. Here we demonstrate that \textit{in situ} high-temperature annealing of hBN-encapsulated monolayer WS$_2$ on a suspended microheater leads to the emergence of spectrally isolated single-photon emitters at cryogenic temperatures. Annealing at temperatures around 1100 K produces a sharp emission line, $X_L$, red-shifted by approximately 80 meV from the neutral exciton and exhibiting a linewidth below 200 $μ$eV. Photoluminescence excitation spectroscopy and power-dependent measurements show that $X_L$ originates from annealing-induced defects in the WS$_2$ monolayer, while second-order photon correlation measurements reveal clear antibunching with $g^{(2)}(0)<0.5$. These results establish high-temperature \textit{in situ} annealing as a controlled means to access defect-bound excitonic states and single-photon emission in van der Waals materials. |
| title | High-Temperature Activation of Single-Photon Emitters in monolayer WS2 |
| topic | Materials Science |
| url | https://arxiv.org/abs/2512.16579 |