Engineering a Correlated Narrow-Gap Semiconductor: Effects of Ga Substitution in EuZn$_2$P$_2$
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| Natura: | Preprint |
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2025
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| author | Dutra, M. Marulanda, E. Vasques, G. G. Oliveira, J. F. Sabino, P. C. Delgado, R. B. Mendonça-Fereira, L. Benvenho, A. R. V. Baggio-Saitovitch, E. Machado, R. K. Kawahala, N. M. Munevar, J. Avila, M. A. Hernandez, F. G. G. |
| author_facet | Dutra, M. Marulanda, E. Vasques, G. G. Oliveira, J. F. Sabino, P. C. Delgado, R. B. Mendonça-Fereira, L. Benvenho, A. R. V. Baggio-Saitovitch, E. Machado, R. K. Kawahala, N. M. Munevar, J. Avila, M. A. Hernandez, F. G. G. |
| contents | The effect of Ga substitution on the electronic, magnetic, and low-energy responses of the Zintl phase EuZn$_2$P$_2$ is investigated by electrical transport, electron spin resonance (ESR), and terahertz time-domain spectroscopy (THz-TDS). Incorporating Ga into EuZn$_2$P$_2$ (EuZn$_{1.8}$Ga$_{0.2}$P$_2$) reduces the electrical resistivity, indicating enhanced free-carrier density and a narrowed semiconducting gap. ESR confirms the persistence of Eu$^{2+}$ moments while showing a crossover from a Lorentzian to a Dysonian lineshape, consistent with reduced skin depth, increased carrier density, and the emergence of diffusive contributions. Ga-substituted compound display pronounced negative magnetoresistance linked to magnetic-polaron formation. THz-TDS reveals strong low-frequency absorption and a notable enhancement of the Drude conductivity in the substituted material, together with an increased carrier scattering time and enhanced carrier-density--to--effective-mass ratio. These results demonstrate that Ga substitution tunes charge transport, carrier dynamics, and short-range magnetic correlations in EuZn$_2$P$_2$, establishing EuZn$_{1.8}$Ga$_{0.2}$P$_2$ as a promising platform for engineering correlated narrow-gap magnetic semiconductors with enhanced electronic and spin-dependent functionalities. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_17123 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Engineering a Correlated Narrow-Gap Semiconductor: Effects of Ga Substitution in EuZn$_2$P$_2$ Dutra, M. Marulanda, E. Vasques, G. G. Oliveira, J. F. Sabino, P. C. Delgado, R. B. Mendonça-Fereira, L. Benvenho, A. R. V. Baggio-Saitovitch, E. Machado, R. K. Kawahala, N. M. Munevar, J. Avila, M. A. Hernandez, F. G. G. Materials Science The effect of Ga substitution on the electronic, magnetic, and low-energy responses of the Zintl phase EuZn$_2$P$_2$ is investigated by electrical transport, electron spin resonance (ESR), and terahertz time-domain spectroscopy (THz-TDS). Incorporating Ga into EuZn$_2$P$_2$ (EuZn$_{1.8}$Ga$_{0.2}$P$_2$) reduces the electrical resistivity, indicating enhanced free-carrier density and a narrowed semiconducting gap. ESR confirms the persistence of Eu$^{2+}$ moments while showing a crossover from a Lorentzian to a Dysonian lineshape, consistent with reduced skin depth, increased carrier density, and the emergence of diffusive contributions. Ga-substituted compound display pronounced negative magnetoresistance linked to magnetic-polaron formation. THz-TDS reveals strong low-frequency absorption and a notable enhancement of the Drude conductivity in the substituted material, together with an increased carrier scattering time and enhanced carrier-density--to--effective-mass ratio. These results demonstrate that Ga substitution tunes charge transport, carrier dynamics, and short-range magnetic correlations in EuZn$_2$P$_2$, establishing EuZn$_{1.8}$Ga$_{0.2}$P$_2$ as a promising platform for engineering correlated narrow-gap magnetic semiconductors with enhanced electronic and spin-dependent functionalities. |
| title | Engineering a Correlated Narrow-Gap Semiconductor: Effects of Ga Substitution in EuZn$_2$P$_2$ |
| topic | Materials Science |
| url | https://arxiv.org/abs/2512.17123 |