Quenching statistics in Si and Ge SPADs using particle Monte Carlo simulation
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arXiv
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| Autori principali: | , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2025
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| _version_ | 1866909971180945408 |
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| author | Dollfus, Philippe Saint-Martin, Jérôme Helleboid, Rémi Cazimajou, Thibauld Pilotto, Alessandro Bournel, Arnaud Rideau, Denis Pala, Marco |
| author_facet | Dollfus, Philippe Saint-Martin, Jérôme Helleboid, Rémi Cazimajou, Thibauld Pilotto, Alessandro Bournel, Arnaud Rideau, Denis Pala, Marco |
| contents | Si- and Ge-based single-photon-avalanche-diodes (SPAD) are investigated by using self-consistent 3D Monte Carlo simulation, in a mixed-mode approach including the presence of a passive quenching circuit. This approach of transport allows us to capture all stochastic features of carrier transport and SPAD operation, not only for the avalanche triggering but also for the quenching process. Beyond the comparison of Si and Ge devices, we show in particular the strong inverse correlation between avalanche and quenching probabilities when tuning the bias voltage, which highlights the importance to find a tradeoff between these two probabilities for the optimization of SPAD operation. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_17818 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Quenching statistics in Si and Ge SPADs using particle Monte Carlo simulation Dollfus, Philippe Saint-Martin, Jérôme Helleboid, Rémi Cazimajou, Thibauld Pilotto, Alessandro Bournel, Arnaud Rideau, Denis Pala, Marco Other Condensed Matter I.6.8; J.6 Si- and Ge-based single-photon-avalanche-diodes (SPAD) are investigated by using self-consistent 3D Monte Carlo simulation, in a mixed-mode approach including the presence of a passive quenching circuit. This approach of transport allows us to capture all stochastic features of carrier transport and SPAD operation, not only for the avalanche triggering but also for the quenching process. Beyond the comparison of Si and Ge devices, we show in particular the strong inverse correlation between avalanche and quenching probabilities when tuning the bias voltage, which highlights the importance to find a tradeoff between these two probabilities for the optimization of SPAD operation. |
| title | Quenching statistics in Si and Ge SPADs using particle Monte Carlo simulation |
| topic | Other Condensed Matter I.6.8; J.6 |
| url | https://arxiv.org/abs/2512.17818 |