Ultra-Wide Bandgap AlGaN Heterostructure Field Effect Transistors with Current Gain Cutoff Frequency Above 85 GHz
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arXiv
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| Autori principali: | , , , , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2025
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| _version_ | 1866917159788085248 |
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| author | Zhu, Yinxuan Allerman, Andrew A. Wissel-Garcia, Ashley Shin, Seungheon Pratt, Jon Cao, Can Liddy, Kyle J. Speck, James S. Klein, Brianna A. Armstrong, Andrew Rajan, Siddharth |
| author_facet | Zhu, Yinxuan Allerman, Andrew A. Wissel-Garcia, Ashley Shin, Seungheon Pratt, Jon Cao, Can Liddy, Kyle J. Speck, James S. Klein, Brianna A. Armstrong, Andrew Rajan, Siddharth |
| contents | We report the design and demonstration of ultra-wide-bandgap (UWBG) AlGaN polarization-graded field-effect transistors (PolFETs) that achieve a current-gain cutoff frequency above 85 GHz and a current density exceeding 1.3 A/mm. Ultra-thin channel and buffer layers were grown epitaxially on AlN substrates, and a reverse-graded AlGaN contact layer was incorporated to reduce the contact resistance to below 1 ohm.mm. With aggressively scaled device dimensions, the AlGaN PolFETs exhibit state-of-the-art high-frequency performance for UWBG transistors. Small-signal modeling reveals both parasitic and transit delays, confirming the benefits of reduced access resistance and enhanced intrinsic transconductance. These results establish a new performance benchmark for UWBG AlGaN devices and demonstrate their strong potential for next-generation millimeter-wave electronics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_18103 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Ultra-Wide Bandgap AlGaN Heterostructure Field Effect Transistors with Current Gain Cutoff Frequency Above 85 GHz Zhu, Yinxuan Allerman, Andrew A. Wissel-Garcia, Ashley Shin, Seungheon Pratt, Jon Cao, Can Liddy, Kyle J. Speck, James S. Klein, Brianna A. Armstrong, Andrew Rajan, Siddharth Applied Physics We report the design and demonstration of ultra-wide-bandgap (UWBG) AlGaN polarization-graded field-effect transistors (PolFETs) that achieve a current-gain cutoff frequency above 85 GHz and a current density exceeding 1.3 A/mm. Ultra-thin channel and buffer layers were grown epitaxially on AlN substrates, and a reverse-graded AlGaN contact layer was incorporated to reduce the contact resistance to below 1 ohm.mm. With aggressively scaled device dimensions, the AlGaN PolFETs exhibit state-of-the-art high-frequency performance for UWBG transistors. Small-signal modeling reveals both parasitic and transit delays, confirming the benefits of reduced access resistance and enhanced intrinsic transconductance. These results establish a new performance benchmark for UWBG AlGaN devices and demonstrate their strong potential for next-generation millimeter-wave electronics. |
| title | Ultra-Wide Bandgap AlGaN Heterostructure Field Effect Transistors with Current Gain Cutoff Frequency Above 85 GHz |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2512.18103 |