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Ultra-Wide Bandgap AlGaN Heterostructure Field Effect Transistors with Current Gain Cutoff Frequency Above 85 GHz

Fuente: arXiv

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Détails bibliographiques
Auteurs principaux:	Zhu, Yinxuan, Allerman, Andrew A., Wissel-Garcia, Ashley, Shin, Seungheon, Pratt, Jon, Cao, Can, Liddy, Kyle J., Speck, James S., Klein, Brianna A., Armstrong, Andrew, Rajan, Siddharth
Format:	Preprint
Publié:	2025
Sujets:	Applied Physics
Accès en ligne:	Acceder al recurso
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

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