Cover Image

Ultra-Wide Bandgap AlGaN Heterostructure Field Effect Transistors with Current Gain Cutoff Frequency Above 85 GHz

Fuente: arXiv

Saved in:

Bibliographic Details
Main Authors:	Zhu, Yinxuan, Allerman, Andrew A., Wissel-Garcia, Ashley, Shin, Seungheon, Pratt, Jon, Cao, Can, Liddy, Kyle J., Speck, James S., Klein, Brianna A., Armstrong, Andrew, Rajan, Siddharth
Format:	Preprint
Published:	2025
Subjects:	Applied Physics
Online Access:	Acceder al recurso
Tags:	Add Tag No Tags, Be the first to tag this record!

Similar Items

Barrier Electrostatics and Contact Engineering for Ultra-Wide Bandgap AlGaN HFETs
by: Shin, Seungheon, et al.
Published: (2025)

High Breakdown Field Multi-kV UWBG AlGaN Transistors
by: Shin, Seungheon, et al.
Published: (2026)

Energy Bands and Breakdown Characteristics in Al2O3/UWBG AlGaN Heterostructures
by: Shin, Seungheon, et al.
Published: (2025)

Heterostructure and Interfacial Engineering for Low-Resistance Contacts to Ultra-Wide Bandgap AlGaN
by: Zhu, Yinxuan, et al.
Published: (2024)

Scaled Ultra-Wide Bandgap AlGaN Polarization-Graded FET with Ultra-thin Buffer Layer
by: Zhu, Yinxuan, et al.
Published: (2025)

High Breakdown Electric Field (> 5 MV/cm) in UWBG AlGaN Transistors
by: Shin, Seungheon, et al.
Published: (2025)

Extremely Low Thermal Resistance Architectures for AlxGaN1-x Semiconductor Devices
by: Guye, Kidus, et al.
Published: (2026)

Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor
by: Rahman, Sheikh Ifatur, et al.
Published: (2024)

Progresses and Frontiers in Ultrawide Bandgap Semiconductors
by: Siddharth Rajan, et al.
Published: (2025)

Progresses and Frontiers in Ultrawide Bandgap Semiconductors
by: Xiaohang Li, et al.
Published: (2024)

8 W at 10 GHz in AlGaN/GaN High Electron Mobility Transistors on Silicon Without Any Carbon or Iron Doping
by: Shonkho Shuvro, et al.
Published: (2025)

kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH3-MBE)
by: Liu, Yizheng, et al.
Published: (2025)

Gain Characteristics of Optically Pumped UVC Lasers with Wide AlGaN Single‐Quantum‐Well Active Regions
by: Giulia Cardinali, et al.
Published: (2024)

Impact of Polarization Charges on Threshold Voltage and Band Offset in AlGaN/GaN Heterostructures
by: Tetsuya Suemitsu, et al.
Published: (2026)

Record Negative Photoconductivity in N‐Polar AlGaN/GaN Quantum‐Well Heterostructures
by: Maciej Matys, et al.
Published: (2025)

Passivation-Free Ga-Polar AlGaN/GaN Recessed-Gate HEMTs on Sapphire with 2.8 W/mm POUT and 26.8% PAE at 94 GHz
by: Bai, Ruixin, et al.
Published: (2025)

Schottky Contact Degradation and Dislocations in AlGaN‐GaN HEMTs
by: Yongkun Sin, et al.
Published: (2025)

Effect of Tensile Strain in GaN Layer on the Band Offsets and 2DEG Density in AlGaN/GaN Heterostructures
by: Date, Mihir, et al.
Published: (2017)

Control of Extraordinary Optical Transmission in Resonant Terahertz Gratings via Lateral Depletion in an AlGaN-GaN Heterostructure
by: Nyabere, Geofrey, et al.
Published: (2025)

Microwave Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistor on Semi‐Insulating Mn‐Doped GaN Substrate
by: Tomoharu Sugino, et al.
Published: (2024)

Selective-injection GaN Heterojunction Bipolar Transistors with 275 kA/cm$^2$ Current Density
by: Xia, Zhanbo, et al.
Published: (2024)

Factores asociados al tratamiento no exitoso para tuberculosis en pacientes previamente tratados en Cali, Colombia, en el periodo 2015-2019
by: Liddy Varela
Published: (2023)

Nonresonant Terahertz Detector Based on Improved N‐Polar AlGaN/GaN Plasma Wave High‐Electron‐Mobility Transistors
by: Yang Dai, et al.
Published: (2024)

Trapping Effect in AlN/GaN/AlGaN High‐Electron‐Mobility Transistors Revealed by Tristate Pulse IV Technique
by: Yihao Zhuang, et al.
Published: (2025)

Al‐Rich AlGaN Channel/AlN Buffer High‐Electron‐Mobility Transistor with Superlattice Structure
by: Jooyong Park, et al.
Published: (2025)

Numerical Investigation of Quasi‐Vertical GaN‐on‐Si MOSFET Incorporating AlGaN/GaN Polarization Interface and AlGaN Functional Layer
by: Zijun Lin, et al.
Published: (2026)

Device and Noise Performances of AlGaN/GaN High Electron Mobility Transistors with Various GaN Channel Layers Grown on AlN Buffer Layer
by: Ki‐Sik Im, et al.
Published: (2024)

Effect of Ultra‐Thin AlGaN Regrown Layer on the Electrical Properties of ZrO2/AlGaN/GaN Structures
by: Toi Nezu, et al.
Published: (2024)

Constant Photocurrent Method to Probe the Sub‐Bandgap Absorption in Wide Bandgap Semiconductor Films: The Case of α‐Ga2O3
by: David Nicol, et al.
Published: (2024)

Source‐Connected Field‐Plate Effects on Static Current, Trap Signature, and Thermal Resistance of AlGaN/GaN High Electron Mobility Transistor
by: Vaidehi Vijay Painter, et al.
Published: (2026)

Electronic Transport in AlGaN/GaN Nanowires Under Ultraviolet Excitation and Edge Depletion Effect, Studied in a Wide Temperature Range
by: Svetlana Vitusevich, et al.
Published: (2026)

Ultrawide Bandgap Lateral AlN Schottky Barrier Diodes With Graded AlGaN Contact Layer on Single‐Crystal AlN Substrate
by: Junzhe Xie, et al.
Published: (2025)

Dynamic RON Degradation Suppression by Gate Field Plate in Partially Recessed AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors
by: Ye Liang, et al.
Published: (2024)

Cathodoluminescence of quantized energy states at AlGaN/GaN interface
by: Chahshouri, Fatemeh, et al.
Published: (2024)

Effect of current on terahertz plasmons in AlGaN/GaN heterostructures
by: Dub, M., et al.
Published: (2025)

Recent Advanced Ultra‐Wide Bandgap β‐Ga2O3 Material and Device Technologies
by: Sihan Sun, et al.
Published: (2024)

A 28‐GHz Vivaldi Array Antenna With Power Divider Structure for Achieving Wide Band and Gain Enhancement
by: Ming-An Chung, et al.
Published: (2024)

High-Performance Ultra-Wide-Bandgap CaSnO3 Metal-Oxide-Semiconductor Field-Effect Transistors
by: Sun, Weideng, et al.
Published: (2025)

High‐Performance Ultra‐Wide‐Bandgap CaSnO 3 Metal‐Oxide‐Semiconductor Field‐Effect Transistors
by: Weideng Sun, et al.
Published: (2025)

Design and Simulation of a III-Nitride Light Emitting Transistor
by: Awwad, Mohammad, et al.
Published: (2024)